| PART |
Description |
Maker |
| CY7C142XAV18 CY7C130XBV25 CY7C132XBV25 |
(CY7C1xxxxVxx) RAM9 QDR-I/DDR-I/QDR-II/DDR- II Errata
|
Cypress Semiconductor
|
| CY7C1304DV25 CY7C1303BV18 CY7C1303BV25 CY7C151V18 |
RAM9 QDR-I/DDR-I/QDR-II/DDR- II Errata
|
Cypress Semiconductor
|
| LTC3776 LTC3776EUF LTC3776EGN |
Dual 2-Phase, No RSENSE Synchronous Controller for DDR/QDR Memory Termination
|
LINER[Linear Technology]
|
| CY7C1412BV18-167BZXI CY7C1414BV18-167BZXI |
36-Mbit QDR-IISRAM 2-Word Burst Architecture 1M X 36 QDR SRAM, 0.5 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1561KV18 CY7C1561KV18-400BZC CY7C1561KV18-400B |
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: QDR-II , 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.29 ns, PBGA165
72-Mbit QDR-II SRAM 4-Word Burst Architecture
|
Cypress Semiconductor, Corp.
|
| CY7C1163V18-400BZC |
18-Mbit QDR™-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 1M X 18 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| K7S1636U4C K7S1618U4C-EC330 |
512Kx36 & 1Mx18 QDR II b4 SRAM
QDR SRAM, PBGA165 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165
|
Samsung semiconductor
Maxim Integrated Products, Inc.
|
| CY7C1515KV18-250BZXI CY7C1515KV18-300BZC CY7C1515K |
72-Mbit QDR II SRAM 4-Word Burst Architecture
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.45 ns, PBGA165
|
http://
Cypress Semiconductor, Corp.
|
| CY7C1412BV18-250BZC |
2MX18 QDR-II BURST 2 SRAM 2M X 18 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| PLL103-03 PLL103-03XC PLL103-03XI PLL103-03XM |
DDR SDRAM Buffer with 4 DDR or 3 SDR/2 DDR DIMMS
|
PhaseLink Corporation
|
| CY7C1168V18-400BZXC CY7C1168V18-375BZXC CY7C1168V1 |
1M X 18 DDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
18-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 1M X 18 DDR SRAM, 0.45 ns, PBGA165
2M X 8 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| HY5DU56422DTP HY5DU56822DTP HY5DU56822DTP-J HY5DU5 |
256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM) 32M X 8 DDR DRAM, 0.75 ns, PDSO66
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
