| PART |
Description |
Maker |
| IXFR180N06 |
HiPerFETTM Power MOSFETs 180 A, 60 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| MRF6S19100H MRF6S19100HR3 MRF6S19100HR306 MRF6S191 |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
|
Freescale Semiconductor, Inc
MOTOROLA
|
| IRF6723M2DTR1P IRF6723M2DTR1PBF IRF6723M2DTRPBF IR |
15 A, 30 V, 0.0066 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Dual Common Drain Control MOSFETs for Multiphase DC-DC Converters
Replaces Two Discrete MOSFETs
|
International Rectifier
|
| IXFM6N90 IXFH6N100 IXFH6N90 IXFM6N100 |
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电000V,导通电2.0Ω的N沟道增强HiPerFET功率MOSFET) 6 A, 1000 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| IXFN180N20 |
Discrete MOSFETs: HiPerFET Power MOSFETS
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电00V,导通电0mΩ的N沟道增强型HiPerFET功率MOSFET)
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS Corporation
|
| MRF18085A MRF18085AR3 MRF18085ALSR3 |
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
MRF18085A, MRF18085AR3, MRF18085ALSR3 GSM/GSM EDGE, 1.8-1.88 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs
|
http://
MOTOROLA[Motorola, Inc]
|
| FSL214R4 FSL214 FSL214D FSL214D1 FSL214D3 FSL214R |
PATCH PANEL HINGE KIT 4U SCA-H
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 1.5 A, 250 V, 2.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1 FS |
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3A 200V的电压，1.50欧姆，拉德硬，SEGR性，P通道功率MOSFET
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
From old datasheet system
3A/ -200V/ 1.50 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| FSL913A0D FSL913A0D1 FSL913A0D3 FSL913A0R FSL913A0 |
7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 7 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 7A 100V的，0.300欧姆，拉德硬，SEGR性，P通道功率MOSFET
7A/ -100V/ 0.300 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
5A/ -100V/ 0.680 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| RFP30P06 RF1S30P06SM RFG30P06 RF1S30P06 FN2437 |
30A/ 60V/ 0.065 Ohm/ P-Channel Power MOSFETs
From old datasheet system
30A 60V 0.065 Ohm P-Channel Power MOSFETs
30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs(30A, 50V, 0.066 Ω,P沟道增强型功率MOS场效应管) 30 A, 60 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| IRFR320 IRFU320 FN2412 IRFR3209A |
3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
From old datasheet system
3.1A 400V 1.800 Ohm N-Channel Power MOSFETs
3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs
0.4A, 400V, 3.607 Ohm,N-Channel PowerMOSFET(15A, 50V, 0.150 惟,N娌??澧?己?????OS?烘?搴??)
|
INTERSIL[Intersil Corporation]
HARRIS SEMICONDUCTOR
|
| HUFA75542P3 HUFA75542S3S HUFA75542S3ST |
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 75A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 75A条（丁）|63AB
75A, 80V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs 75 A, 80 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
75A, 80V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs 75 A, 80 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
75A 80V 0.014 Ohm N-Channel UltraFET Power MOSFETs
|
Intersil, Corp.
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
|
