| PART |
Description |
Maker |
| MSM531655E MSM531655E-XXTS-K MSM531655E-XXGS-K |
524,288-Double Words x 32-bit or 1,048,576-Words x 16-bit MaskROM, 8Double Word x 32-Bit or 16Word x 16-Bit/Page Mode MASKROM
|
OKI SEMICONDUCTOR CO., LTD.
|
| M5M5V408BTP-10LI |
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
|
| K4C89323AF-GCFB K4C89323AF-TCF6 K4C89323AF-TCF5 K4 |
2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M5M5V5636GP-20 M5M5V5636GP-22 M5M5V5636GP-25 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
Renesas Electronics Corporation
|
| M5M5V5636GP16 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
Mitsubishi Electric Semiconductor
|
| M5M5Y5636TG-20 M5M5Y5636TG-22 M5M5Y5636TG-25 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M5408BFP M5M5408BRT M5M5408BTP M5M5408BRT-70H M5 |
Memory>Low Power SRAM
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
|
Renesas Electronics Corporation
|
| GM71C18163CL-6 GM71C18163C GM71C18163CL-5 GM71C181 |
1,048,576 words x 16 bit CMOS DRAM, 60ns
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM
|
HYNIX[Hynix Semiconductor]
|
| HD404342RFP HD404344RFP HD404C342RFP HD404C344RFP |
ROM: 2.048 words; RAM: 256; ; 4-bit microcomputer
ROM: 4.096 words; RAM: 256; ; 4-bit microcomputer
ROM: 1.024 words; RAM: 256; ; 4-bit microcomputer
|
Hitachi Semiconductor
|
| HN27C4000G-10 HN27C4000G HN27C4000G-15 |
524288-Word 8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM 524288词？8-Bit/262144-Word x 16位的CMOS紫外线可擦除只读存储
524288-Word ?8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| TS87C51U2NBSP TS80C51U2NBSP TS87C51U2 TS83C51U2 TS |
Single Point to Point IEEE 1355 High Speed Controller
Double UART 8-bit CMOS Microcontroller
From old datasheet system
Double UART 8-bit microcontroller ROMless
Double UART 8-bit microcontroller 16 Kbytes OTP
|
ATMEL Corporation
|
