| PART |
Description |
Maker |
| GRM21BR72A103KA01B ATC600F220JT250XT ATC600F300JT2 |
RF Power LDMOS Transistors
|
Freescale Semiconductor, Inc
Freescale Semiconductor, In...
Freescale Semiconductor...
|
| AFV09P350-04GNR3 AFV09P350-04N AFV09P350-04NR3 |
RF Power LDMOS Transistors
|
NXP Semiconductors
|
| RC1206FR--108R2L B41694A5477Q7 C5750X7S2A106M AFT2 |
RF Power LDMOS Transistors
|
Freescale Semiconductor, Inc
Freescale Semiconductor...
|
| LET8180 |
RF POWER TRANSISTORS Ldmos Enhanced Technology
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| BLF573S BLF573 |
HF / VHF power LDMOS transistor
A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.
HF - VHF power LDMOS transistor
|
NXP Semiconductors N.V.
|
| LET9006 |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
|
STMicroelectronics
|
| LET20015 |
RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY IN PLASTIC PACKAGE
|
ST Microelectronics
|
| LET20030S |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
|
STMICROELECTRONICS[STMicroelectronics]
|
| PTFB183404E PTFB183404F |
High Power RF LDMOS Field Effect Transistors 340 W, 1805 ?1880 MHz
|
Infineon Technologies AG
|
| MRFE6VP61K25GSR5 MRFE6VP61K25HR6 MRFE6VP61K25HR5 M |
RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
|
Freescale Semiconductor, Inc
Freescale Semiconductor...
|
| BLF6G13L-250P BLF6G13LS-250P |
Product description250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz.
Power LDMOS transistor BLF6G13LS-250P<SOT1121B (CDFM4)|<<http://www.nxp.com/packages/SOT1121B.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
