| PART |
Description |
Maker |
| IBM0118165J3-70 IBM0118165PT3-6R IBM0118165BT3-6R |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
International Business Machines, Corp.
|
| GM71V18163CJ-6E |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
Hynix Semiconductor, Inc.
|
| UPD42S4210ALE-50 UPD424210AG5-70 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
TE Connectivity, Ltd.
|
| V53C16258HK60 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
Murata Manufacturing Co., Ltd.
|
| HYB514171BJL-60 HYB514171BJL-70 |
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
SIEMENS AG
|
| UPD424260V-80 UPD424260V-70 UPD42S4260G5-70-7JF UP |
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
Murata Manufacturing Co., Ltd.
|
| HM514260ALJ-6R HM51S4260ALJ-6R HM514260ALZ-6R HM51 |
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
3M Company
|
| UPD4216160LLE-A80 UPD4217400LG3-A80 UPD42S16400LG3 |
x16 Fast Page Mode DRAM
x4 Fast Page Mode DRAM x4快速页面模式的DRAM
|
EPCOS AG
|
| GM71C18163BT-8 GM71C18163BJ-6 GM71C18163BJ-8 GM71C |
1,048,576 words x 16 bit DRAM, 80ns, low power
1,048,576 words x 16 bit DRAM, 70ns, low power
1,048,576 words x 16 bit DRAM, 60ns, low power
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
LG Semiconductor
|
| UPD424263LLE-A80 UPD424263LLE-A70 UPD424263LG5M-A6 |
20-output, 200-MHz Zero Delay Buffer
16 Kbit (2K x 8) nvSRAM
3.3V Zero Delay Buffer
x16 Fast Page Mode DRAM
Three-PLL General-Purpose EPROM Programmable Clock Generator
Phase-Aligned Clock Multiplier x16快速页面模式的DRAM
|
Cooper Hand Tools
|
| 42S16800A IS42S81600A IS42S16800A IS42S32400A IS42 |
16Meg x 8/ 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
CABLE ASSEMBLY; BNC MALE TO BNC FEMALE BULKHEAD; 50 OHM, RG174A/U COAX; ; *USES STANDARD 50 OHM INTERFACE CONNECTORS* 4M X 32 SYNCHRONOUS DRAM, 7 ns, PDSO86
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 16M X 8 SYNCHRONOUS DRAM, 7 ns, PDSO54
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PDSO86
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 4M X 32 SYNCHRONOUS DRAM, 7 ns, PDSO86
|
Integrated Silicon Solution Inc
Integrated Silicon Solution, Inc.
|
| NAND01G-N NAND01GR4N5 NAND01GR3N6 |
1 Gbit (x8/x16) 2112 Byte Page NAND Flash Memory and 512 Mbit (x16) LPSDRAM, 1.8V, Multi-Chip Package
|
STMICROELECTRONICS[STMicroelectronics]
|
