PART |
Description |
Maker |
KM23V64000T |
64M-Bit (8Mx8 /4Mx16) CMOS Mask ROM(64M(8Mx8 /4Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K3P7V1000 K3P7V1000B-YC K3P7VU1000B-YC |
64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM 6400位(8Mx8 / 4Mx16)的CMOS掩膜ROM
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K5T6432YT K5T6432YTM-T310 |
64Mbit (4Mx16) four bank NOR flash memory / 32Mbit (2Mx16) UtRAM, 100ns Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
HY5V66GF HY5V66GF-H HY5V66GF-P |
SDRAM - 64Mb 4 Banks x 1M x 16Bit Synchronous DRAM 4Mx16|3.3V|4K|H|SDR SDRAM - 64M x16 SDRAM x16内存
|
Hynix Semiconductor TT electronics Semelab, Ltd.
|
EMC646SP16K |
4Mx16 bit CellularRAM
|
EMLSI
|
SDC-361 SDC362 SDC361 |
(SDC-361 / SDC-362) 16-Bit 2 Speed Synchro to Digital and Resolver to Digital Converter (SDC361 / SDC362) 16-Bit 2 Speed Synchro to Digital and Resolver to Digital Converter
|
DDC
|
K1B6416B6C |
4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory
|
Samsung Electronic
|
K1S64161CCNBSP K1S64161CC |
4Mx16 bit Page Mode Uni-Transistor Random Access Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
W25X32VDAI W25X32VDAIZ W25X32VZPI W25X32VZPIZ W25X |
16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond http://
|
AD2S44-TM11B AD2S44-UM18B AD2S44-TM18B |
Low Cost, 14-Bit, Dual Channel Synchro/Resolver-to-Digital Converter
|
Analog Devices
|
UPD23C64000JLGX-XXX UPD23C64000JLGY-XXX-MJH UPD23C |
64M-bit (8M-wordx8-bit/4M-wordx16-bit) Mask ROM
|
NEC
|
MX26L6420XAI-12 MX26L6420MI-90 MX26L6420TI-90 MX26 |
64M-BIT [4M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM MICA RoHS Compliant: No 64M-BIT [4M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM 4M X 16 FLASH 3V PROM, 120 ns, PDSO44
|
Macronix International Co., Ltd. http://
|