| PART |
Description |
Maker |
| FM25040-C FM25040-PS |
NVRAM (Ferroelectric Based) NVRAM中（基于铁电
|
Ramtron International, Corp.
|
| DS1245ABL-120 DS1245ABL-120-IND DS1245YL-120-IND D |
NVRAM (Battery Based) NVRAM中（基于电池
|
Abracon, Corp.
|
| M40Z30005 M40Z300MH6TR M40Z300MQ6TR M40Z300WMH6TR |
NVRAM CONTROLLER FOR UP TO EIGHT LPSRAM
5V or 3V NVRAM Supervisor for Up to 8 LPSRAMs 5VV NVRAM中监多达8LPSRAMs
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| M41ST87YMX6F |
5.0 V and 3.3/3.0 V secure serial RTC and NVRAM supervisor with tamper detection and 128 bytes of clearable NVRAM
|
STMicroelectronics
|
| UDS-3611H UDS-3612H UDS-3613H UDS-3614H UDN-3612M |
3.0/3.3V I2C combination serial RTC, NVRAM supervisor and microprocessor supervisor
5.0 or 3.0V, 512 Bit (64 Bit x8) Serial RTC (SPI) SRAM and NVRAM Supervisor
Serial real-time clock
25 A standard and Snubberless" triacs
25 A standard and Snubberless" triacs 双外围驱动器
5.0 V and 3.3/3.0 V secure serial RTC and NVRAM supervisor with tamper detection and 128 bytes of clearable NVRAM 双外围驱动器
|
Motorola Mobility Holdings, Inc.
|
| MR44V064B |
64k(8,192-Word × 8-Bit) FeRAM (Ferroelectric Random Access Memory) I2C
|
LAPIS Semiconductor Co....
|
| BZX84C2V4LT1 SOT-23 BZX84C2V4LT1THRUBZX84C75LT1 BZ |
Zener Voltage Regulator Didoes
CONTACT ELEC CONNECTOR
RECEPTACLE,CONN 6POS STRT
225 mW SOT-23 Zener Voltage Regulator Diodes 24 V, 0.225 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB
5.0 V and 3.3/3.0 V secure serial RTC and NVRAM supervisor with tamper detection and 128 bytes of clearable NVRAM 225毫瓦的SOT - 23封装稳压稳压二极
|
Motorola Inc
Motorola, Inc.
Motorola Mobility Holdings, Inc.
MOTOROLA INC
|
| MB85R256G |
256K-bits FRAM LSI using the ferroelectric process and CMOS process technologies
|
http://
|
| MB85R256PFTN MB85R256PF MB85R256 |
Memory FRAM(Ferroelectric Random Access Memory)
|
Fuji Electric
Fujitsu Component Limited.
|
| STK10C68-L45M STK10C68-L55M |
NVRAM (EEPROM Based)
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:80mA; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:80mA NVRAM中（EEPROM的基础
|
Electronic Theatre Controls, Inc.
|
| M40Z11107 M40Z111WMH6E M40Z111WMH6F M4Z32-BR00SH1 |
5V or 3V NVRAM supervisor for up to two LPSRAMs
|
STMicroelectronics
|
