| PART |
Description |
Maker |
| HN7G02FU |
Multi Chip Discrete Device Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application.
|
TOSHIBA
|
| 2SC3181 |
POWER AMPLIFIER APPLICATION
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK1530Y |
High-Power Amplifier Application
|
Toshiba Semiconductor
|
| 2SD718 |
HIGH POWER AMPLIFIER APPLICATION
|
UTC
|
| 2SC5344U |
Audio power amplifier application
|
KODENSHI KOREA CORP.
|
| 2SJ31309 |
Audio Frequency Power Amplifier Application
|
Toshiba Semiconductor
|
| 2SK201309 |
Audio Frequency Power Amplifier Application
|
Toshiba Semiconductor
|
| 2SA1298 |
Transistor Silicon PNP Epitaxial (PCT process) Low Frequency Power Amplifier Application Power Switching Applications
|
TOSHIBA
|
| MRF421 |
Designed primarily for application as a high-power linear amplifier from 2.0 to 30 MHz
|
New Jersey Semi-Conduct...
|
| 2SB1429 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE POWER AMPLIFIER APPLICATION
|
TOSHIBA[Toshiba Semiconductor]
|
