| PART |
Description |
Maker |
| STD7NM50N-1 STP7NM50N STF7NM50N STD7NM50N |
N-channel 500V - 0.70Ω - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh Power MOSFET
N-channel 500V - 0.70楼? - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh垄芒 Power MOSFET
N-channel 500V - 0.70ヘ - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh⑩ Power MOSFET
|
STMicroelectronics
|
| STB25NM50N-1 STF25NM50N STW25NM50N STP25NM50N STB2 |
N-channel 500V - 0.11Ω - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh Power MOSFET
N-channel 500V - 0.11Ω - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh?/a> Power MOSFET
N-channel 500V - 0.11楼? - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh垄芒 Power MOSFET
N-channel 500V - 0.11ヘ - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh⑩ Power MOSFET
|
STMicroelectronics
|
| GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation
High Power Switching Applications The 4th Generation 高功率转换应用的第四
|
Toshiba, Corp.
|
| APT10035B2FLL APT10035LFLL |
POWER MOS 7 1000V 28A 0.350 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-19 RoHS Compliant: No
|
Advanced Power Technology Ltd.
|
| STP28NM50N STB28NM50N |
N-channel Power MOSFETs developed using the second generation of MDmesh
|
STMicroelectronics
|
| APT50M50L2FLL |
POWER MOS 7 500V 89A 0.050 Ohm
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology, Ltd.
|
| APT6025BFLL APT6025SFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 600V 24A 0.250 Ohm
|
Advanced Power Technology, Ltd.
|
| IRLML2803GPBF11 |
Generation V Technology, Ultra Low On-Resistance, N-Channel MOSFET
|
International Rectifier
|
| APT8020JFLL |
40 A, 800 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
MICROSEMI[Microsemi Corporation]
|
| APT10021JLL_04 APT10021JLL APT10021JLL04 |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
37 A, 1000 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| APT10026JLL_03 APT10026JLL APT10026JLL03 |
30 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology, Ltd.
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| APT10026JFLL_03 APT10026JFLL APT10026JFLL03 |
30 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
