| PART |
Description |
Maker |
| STEL-2000A |
Fast Acquisition Burst Processor
|
Intel Corporation
|
| HA5352IP HA5352 HA5352IB |
Fast Acquisition Dual Sample and Hold Amplifier
|
INTERSIL[Intersil Corporation]
|
| HA5352MJ_883 HA5352_883 HA5352883 HA5352MJ/883 HA5 |
Fast Acquisition Dual Sample and Hold Amplifier
|
INTERSIL[Intersil Corporation]
|
| GPS-41ML GPS-41MLF GPS-41MLR |
Fast Acquisition Enhanced Sensitivity 12 Channel GPS Sensor Module
|
rfsolutions.ltd
|
| AD7891 AD7891YP-2 AD7891SS-2 |
0.3-7V; 450mW; LC2MOS 8-channel, 12-bit high speed, data acquisition system. For data acquisition systems, motor control, mobile communication base stations, instrumenatation
True Bipolar Input, Single Supply, Parallel, 8-Channel, 12-Bit High Speed Data Acquisition System
|
Analog Devices
|
| GS84032T-166 GS84032T-166I GS84032B-166I GS84032B- |
x32 Fast Synchronous SRAM
x36 Fast Synchronous SRAM
256K x 18 128K x 32 128K x 36 4Mb Sync Burst
x18 Fast Synchronous SRAM x18快速同步SRAM
|
Coilcraft, Inc.
|
| SY88149HALMG |
1.25Gbps Burst-Mode Limiting Amplifier with Ultra-Fast Signal Assert Timing
|
Micrel Semiconductor
|
| AD7891ACHIPS-2 AD7891ACHIPS-1 AD7891AP-1REEL AD789 |
LC MOS 8-Channel, 12-Bit High Speed Data Acquisition System
True Bipolar Input, Single Supply, Parallel, 8-Channel, 12-Bit High Speed Data Acquisition System
LC2MOS 8-Channel, 12-Bit High Speed Data Acquisition System
|
Analog Devices
|
| GS88018BT-133 GS88018BT-133I GS88018BT-150 GS88018 |
133MHz 8.5ns 512K x 18 9Mb sync burst SRAM
150MHz 7.5ns 512K x 18 9Mb sync burst SRAM
166MHz 7ns 512K x 18 9Mb sync burst SRAM
200MHz 6.5ns 512K x 18 9Mb sync burst SRAM
225MHz 6ns 512K x 18 9Mb sync burst SRAM
250MHz 5.5ns 512K x 18 9Mb sync burst SRAM
|
GSI Technology
|
| MN7150-8 MN7150-8H MN7150-8HB MN7150-8HBCH MN7150- |
8-CH 12-BIT PROPRIETARY METHOD ADC, PARALLEL ACCESS, CQMA62
8-channel 12-bit data acquisition system
16-channel 12-bit data acquisition system
|
Integrated Circuit Systems
|
| APT50GF60B2RD APT50GF60LRD |
Fast IGBT & FRED 600V 80A
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
The Fast IGBT is a new generation of high voltage power IGBTs.
Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C ⑩的快速IGBT是一种高压IGBT的新一代
|
ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
|
