| PART |
Description |
Maker |
| BUK553-100A BUK553-100B BUK553-100A/B |
TRANSISTOR UNIVERSAL MOSFET SOT
PowerMOS transistor Logic level FET 12 A, 100 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BCV62B BCV62C BCV62 BCV62A BCV62B/T1 |
TRANSISTOR SOT-23 晶体管的SOT - 23
PNP general purpose double transistor
TRANSISTOR|BJT|ARRAY|BLDGBLOCK|30VV(BR)CEO|100MAI(C)|SOT-143
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| BUK7107-55ATE |
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 75A I(D) | SOT-426
TrenchPLUS standard level FET
|
Philips
|
| BUK9107_40ATC-03 BUK9107-40ATC |
TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 75A I(D) | SOT-426
From old datasheet system
TrenchPLUS logic level FET
|
Philips
|
| FXT3866SM FXT449SM FXT549SM FXT749SM FXT649SM FXT6 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SOT-89
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | SOT-89
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 2A I(C) | SO
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 2A I(C) | SO
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 500MA I(C) | SO
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管| npn型| 150伏五（巴西）总裁| 1A条一（c）|
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 2A I(C) | SO 晶体管|晶体管|进步党| 100V的五（巴西）总裁|甲一（c）|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | SOT-89 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 1A条一（c）|采用SOT - 89
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管|叩| 45V的五（巴西）总裁| 1A条一（c）|
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 400MA I(C) | SO 晶体管|晶体管|叩| 30V的五（巴西）总裁| 400mA的一（c）|
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | SOT-89
|
Zetex Semiconductor PLC
Fujitsu, Ltd.
Bourns, Inc.
Amphenol, Corp.
|
| CSA1162Y-3E CSA1162 CSA1162GR_G-3F CSA1162GRG-3F C |
0.150W Low Frequency PNP SMD Transistor. 50V Vceo, 0.150A Ic, 200 - 400 hFE. Complementary CSC2712
LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | SOT-23
晶体管|晶体管|进步党| 50V五（巴西）总裁| 150毫安一c）| SOT - 23封装
|
CDIL[Continental Device India Limited]
|
| 2SA1121 2SA1121SC |
TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 500MA I(C) | SOT-23 晶体管|晶体管|进步党| 35V的五（巴西）总裁| 500mA的一（c）| SOT - 23封装
Silicon PNP Epitaxial
Silicon PNP Transistor
|
HIROSE ELECTRIC Co., Ltd.
HITACHI[Hitachi Semiconductor]
|
| BSR12T/R |
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 100MA I(C) | SOT-23 晶体管|晶体管|进步党| 15V的五（巴西）总裁| 100mA的一c）| SOT - 23封装
|
Thomas
|
| BC850CL BC849CL |
16Mb EDO/FPM - OBSOLETE
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 100MA I(C) | SOT-23 晶体管|晶体管|叩| 30V的五（巴西）总裁| 100mA的一（c）| SOT - 23封装
|
Electronic Theatre Controls, Inc.
|
| DDTC114WE DDTC114WE-7 DDTC114YE DDTC114YE-7 DDTC12 |
SNAP LOCK CABLE MARKER - W 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
4-Indent D-Sub Crimper; For Use With:4-Indent Closed-Barrel D-Sub Contacts; Color:Red; Series:1440; Wire Size (AWG):20-12 RoHS Compliant: Yes npn型预偏置信号小的SOT - 523表面贴装晶体
NPN PRE-BIASED SMALL SIGNAL SOT-523 SURFACE MOUNT TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
NPN PRE-BIASED SMALL SIGNAL SOT-523 SURFACE MOUNT TRANSISTOR npn型预偏置信号小的SOT - 523表面贴装晶体
NPN PRE-BIASED SMALL SIGNAL SOT-523 SURFACE MOUNT TRANSISTOR
|
Diodes, Inc.
Diodes Inc.
DIODES[Diodes Incorporated]
|
| FA1F4Z FA1F4ZL65 FA1F4Z-L FA1F4Z-T2B |
Compound transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD
TRANSISTOR | 60V V(BR)CEO | 100MA I(C) | SOT-346
|
NEC Corp.
|
