| PART |
Description |
Maker |
| MGFL45V1920 L45V1920 |
From old datasheet system
1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET
1.9-2.0 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFS45V2123A |
2.1 - 2.3GHz BAND 32W INTERNALLY MATCHD GaAs FET
2.1-2.3 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFS45V2325A11 |
2.3-2.5 GHz BAND / 32W
|
Mitsubishi Electric Semiconductor
|
| MGFS45A2527B MGFS45A2527B11 |
2.5-2.7 GHz BAND / 32W
|
Mitsubishi Electric Semiconductor
|
| MGFC45V3642A_04 MGFC45V3642A MGFC45V3642A04 |
3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC45V5964A |
5.9-6.4GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric Corporation
|
| RFSP5022 PRFS-P5022-EVL PRFS-P5022-009 PRFS-P5022- |
5.15-5.85 GHz U-NII Power Amplifier 5.15-5.85千兆赫的U - NII功率放大
5.15-5.85 GHz U-NII Power Amplifier 5150 MHz - 5850 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
Single-band power amplifiers
The RFS P5022 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 5.15-5.85 GHz ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| RMPA2550 |
2.4-2.5 GHz and 5.15-5.85 GHz Dual Band InGaP HBT Linear Power Amplifier
|
FAIRCHILD[Fairchild Semiconductor]
FAIRCHILD [Fairchild Semiconductor]
|
| UPG2164T5N-A |
DPDT SWITCH FOR 2.4 GHz AND 6 GHz DUAL-BAND WIRELESS LAN
|
California Eastern Labs
|
| UPG2163T5N-E2-A UPG2163T5N-E2 UPG2163T5N |
SPDT SWITCH FOR 2.4 GHz AND 6 GHz DUAL-BAND WIRELESS LAN
|
CEL[California Eastern Labs]
|
| FMPA2151 |
2.4-2.5 GHz and 4.9-5.9 GHz Dual Band Linear Power Amplifier Module
|
http://
FAIRCHILD[Fairchild Semiconductor]
|
