| PART |
Description |
Maker |
| S29WS512P S29WS256N S71WS512N S71WS512P |
Migrating from the S71WS512N to the S71WS512P
|
SPANSION[SPANSION]
|
| S29WS512N |
Migrating from the S71WS512N to the S71WS512P
|
SPANSION
|
| EB381D |
Migrating from the MC68HC811E2 to the MC68HC11F1
|
Motorola, Inc.
|
| AN1746 MC68HC705KJ1CP |
Migrating from the MC68HC705K1 to the MC68HC705KJ1
|
飞思卡尔半导体(中国)有限公司
|
| LH28F160BVHE-BTL90 |
16M-BIT(2Mbit x8/1Mbit x16)Boot Block Flash MEMORY(16M2M位x8/1Mx16)Boot Block 闪速存储器)
|
Sharp Corporation
|
| 1N6275 1N6281 1N6274A 1N6292 1N6271A 1N6289 1N6269 |
Diode TVS Single Uni-Dir 12.1V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 21.8V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 11.1V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 60.7V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 8.55V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 45.4V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 8.1V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 6.63V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 97.2V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 89.2V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 7.37V 1.5KW 2-Pin Case 1
Diode TVS Single Bi-Dir 7.37V 1.5KW 2-Pin Case 1.5KE
|
New Jersey Semiconductor
|
| CY3LV512-10JI CY3LV010 CY3LV010-10JC CY3LV010-10JI |
1M CPDL boot EEPROM.
512K CPDL boot EEPROM.
512K / 1 Mbit CPLD Boot EEPROM
|
CYPRESS[Cypress Semiconductor]
|
| 15KPA200 15KPA240A 15KPA24C 15KPA22A 15KPA26 15KPA |
Diode TVS Single Uni-Dir 200V 15KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 240V 15KW 2-Pin Case P600 Tape and Ammo
Diode TVS Single Bi-Dir 24V 15KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 22V 15KW 2-Pin Case P600 Tape and Ammo
Diode TVS Single Uni-Dir 26V 15KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 26V 15KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 24V 15KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 28V 15KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 18V 15KW 2-Pin Case P600 Tape and Ammo
Diode TVS Single Bi-Dir 18V 15KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 18V 15KW 2-Pin Case P600 Tape and Ammo
Diode TVS Single Uni-Dir 18V 15KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 17V 15KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 17V 15KW 2-Pin Case P600 Tape and Ammo
|
New Jersey Semiconductor
|
| 3SMC6.5A 3SMC7.0A 3SMC9.0A |
Uni-Directional Glass Passivated Junction Transient Voltage Suppressors(最大反向工作电.5V,单向玻璃钝化节点瞬变电压抑制
Uni-Directional Glass Passivated Junction Transient Voltage Suppressors(最大反向工作电6.5V,单向玻璃钝化节点瞬变电压抑制
Uni-Directional Glass Passivated Junction Transient Voltage Suppressors(最大反向工作电7.0V,单向玻璃钝化节点瞬变电压抑制
Uni-Directional Glass Passivated Junction Transient Voltage Suppressors(??ぇ???宸ヤ??靛?.0V,????荤???????????靛??????
|
Central Semiconductor Corp.
|
| M29F002B M295V002B-120K6TR M295V002B-120XK6TR M29F |
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory
2 Mbit 256Kb x8 / Boot Block Single Supply Flash Memory
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory 2兆位256Kb × 8，启动座单电源闪
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory 2兆位56Kb × 8，启动座单电源闪
35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 2兆位56Kb × 8，启动座单电源闪
|
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| E28F004BVT80 E28F004BVB80 E28F004BVT60 E28F004BVT1 |
4-MBIT (256K X 16/ 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
4-MBIT (256K X 16. 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
Dual-Slot, PCMCIA Analog Power Controller
Evaluation Kit for the MAX5943A/B/C/D/E
4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 256K X 16 FLASH 5V PROM, PDSO48
4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 256K X 16 FLASH 5V PROM, PDSO56
|
Intel Corporation
Intel Corp.
Intel, Corp.
|
