| PART |
Description |
Maker |
| IDT70T659S8BF IDT70T659S8BC IDT70T659S8BFI IDT70T6 |
High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 10ns
High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 8ns
High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 15ns
JFET-Input Operational Amplifier 14-SOIC -40 to 85 256K X 36 DUAL-PORT SRAM, 12 ns, PQFP208
HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 10 ns, PQFP208
JFET-Input Operational Amplifier 14-SOIC 0 to 70 高.5V56/128K.3V 5011 2.5V的接口36 ASYNCHRONO美国双端口静RAM
HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 12 ns, PBGA256
HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 12 ns, PBGA208
JFET-Input Operational Amplifier 14-SOIC 0 to 70 128K X 36 DUAL-PORT SRAM, 12 ns, PQFP208
High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 12ns
|
Integrated Device Techn...
Integrated Device Technology, Inc.
IDT
|
| IC62C1024 IC62C1024-35TI IC62C1024-35W IC62C1024-3 |
128K X 8 HIGH SPEED CMOS STATIC RAM
128K X 8 HIGH SPEED CMOS STATIC RAM 128K的乘八高速CMOS静态RAM
From old datasheet system
ASYNCHRONOUS STATIC RAM, Low Speed A.SRAM
55ns; 5V; 128K x 8 high-speed CMOS static RAM
|
Integrated Circuit Solu...
ICSI[Integrated Circuit Solution Inc]
|
| IC62VV51216LL IC62VV51216L IC62VV51216L-70B IC62VV |
512K x 16 bit 1.8V and Ultra Low Power CMOS Static RAM
ASYNCHRONOUS STATIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IS61WV12816DALS |
128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
|
Integrated Silicon Solution
|
| IDT70T631S |
HIGH-SPEED 2.5V ASYNCHRONOUS DUAL-PORT STATIC RAM
|
IDT
|
| IS61WV102416BLL IS61WV102416ALL IS64WV102416BLL |
1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
|
http://
Integrated Silicon Solution...
Integrated Silicon Solu...
|
| MCM6323AYJ10 MCM6323AYJ10R SCM6323AYJ10A SCM6323AY |
64K X 16 bit 3,3V asynchronous fast static RAM
ER 3C 3#12 PIN PLUG RoHS Compliant: No
64K x 16 Bit 3.3 V Asynchronous Fast Static RAM 64K X 16 STANDARD SRAM, 10 ns, PDSO44
64K x 16 Bit 3.3 V Asynchronous Fast Static RAM 64K X 16 STANDARD SRAM, 15 ns, PDSO44
64K x 16 Bit 3.3 V Asynchronous Fast Static RAM 64K X 16 STANDARD SRAM, 12 ns, PDSO44
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Motorola, Inc.
Motorola Mobility Holdings, Inc.
|
| IDT70V657S |
HIGH-SPEED 3.3V 32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM
|
IDT[Integrated Device Technology]
|
| IS61WV102416ALL IS61WV102416BLL |
(IS6xWV102416xLL) 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
|
ISSI
|
| IS64LV25616AL IS64LV25616AL-10TA1 IS64LV25616AL-12 |
256K X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
|
Integrated Silicon Solution, Inc
|
| IS64LV51216 IS64LV51216-12TA3 IS64LV51216-12TLA3 I |
512K X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
|
天津新技术产业园区管理委员会
ISSI[Integrated Silicon Solution, Inc]
|
