| PART |
Description |
Maker |
| 3VD297600YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 3VD186600YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 1206SXXX 1808AXXX 2225AXXX 2220GXXX 1825CXXX 2220H |
High Voltage MLC Chips
|
AVX Corporation
|
| LD20 LD40 LD10 LD13 LD12 LD06 LD08 |
High Voltage MLC Chips Tin/Lead Termination “B For 600V to 5000V Applications
High Voltage MLC Chips Tin/Lead Termination “B?For 600V to 5000V Applications
|
AVX Corporation
|
| 3VD045060JL |
Nchannel MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 3VD037060NEJL |
N-CH MOSFET CHIPS WITH ESD PROTECTED STRUCTURE
|
Silan Microelectronics Joint-stock
|
| OD-148-C |
HIGH-POWER GaAlAs IR EMITTER CHIPS
|
OptoDiode Corp
|
| OD-24X24-C |
HIGH-POWER GaAlAs EMITTER CHIPS
|
OptoDiode Corp
|
| IR2308 IR2308S |
High Voltage and High Speed power MOSFET and IGBT Half Bridge Driver in a 8-pin DIP package
High Voltage and High Speed power MOSFET and IGBT Half Bridge Driver in a 8-lead SOIC package
|
International Rectifier
|
