| PART |
Description |
Maker |
| UT12N10 UT12N10G-TN3-R UT12N10L-TN3-R |
12 Amps, 100 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| MTB33N10E-D |
Power MOSFET 33 Amps, 100 Volts N-Channel D2PAK
|
ON Semiconductor
|
| MTD6P10E-D |
Power MOSFET 6 Amps, 100 Volts P-Channel DPAK
|
ON Semiconductor
|
| SFF120-28Q |
9.2 AMPS 100 VOLTS 0.35S QUAD N-CHANNEL POWER MOSFET
|
SSDI[Solid States Devices, Inc]
|
| NTD12N10-D |
Power MOSFET 12 Amps, 100 Volts N-Channel Enhancement-Mode DPAK
|
ON Semiconductor
|
| MGB19N35CL MGP19N35CL |
Ignition IGBT 19 Amps, 350 Volts(19A50V钳位电压，点火绝缘栅双极型晶体管（D2PAK封装 点火IGBT一十九安培50伏特，（9A50V钳位电压，点火绝缘栅双极型晶体管（采用D2PAK封装））
Ignition IGBT 19 Amps, 350 Volts(19A350V钳位电压，点火绝缘栅双极型晶体管（TO-220封装 19 A, 380 V, N-CHANNEL IGBT, TO-220AB
Ignition IGBT 19 Amps, 350 Volts(19A锛?50V?充??靛?锛?????缂????????浣??锛?O-220灏??锛?
|
ON Semiconductor
|
| NTMS4P01R2 NTMS4P01R2/D NTMS4P01R2-D |
Power MOSFET -4.5 Amps, -12 Volts P-Channel Enhancement-Mode Single SO-8 Package
Receptacle With A Standard Tail
Power MOSFET -4.5 Amps-12 Volts
|
ON Semiconductor
|
| CSHD3-100 |
SCHOTTKY RECTIFIER SINGLE/ 3.0 AMPS/ 100 VOLTS HIGH VOLTAGE
SCHOTTKY RECTIFIER SINGLE, 3.0 AMPS, 100 VOLTS HIGH VOLTAGE 3 A, 100 V, SILICON, RECTIFIER DIODE
|
Central Semiconductor Corp.
Central Semiconductor, Corp.
|
| NTB45N06LT4 NTB45N06LT4G NTP45N06L NTB45N06L NTB45 |
Power MOSFET 45 Amps, 60 Volts, Logic Level
45 Amps, 60 Volts, Logic Level, N−Channel TO−220 and D2PAK
|
ONSEMI[ON Semiconductor]
|
| SSR2010Z SSR2008M SSR2008Z SSR2009M SSR2009Z SSR20 |
20 AMPS 100 VOLTS CHOTTKY RECTIFER
|
Solid States Devices, Inc.
SSDI[Solid States Devices, Inc]
|
| NTD32N06L NTD32N06LT4 NTD32N06L-1 NTD32N06LT4G NTD |
Power MOSFET 32 Amps, 60 Volts, Logic Level(N−Channel DPAK)
Power MOSFET 32 Amps, 60 Volts, Logic Level(N-Channel DPAK)
Power MOSFET 32 Amps / 60 Volts / Logic Level(N-Channel DPAK)
Power MOSFET 32 Amps, 60 Volts, Logic Level N-Channel DPAK
|
ONSEMI[ON Semiconductor]
|
