| PART |
Description |
Maker |
| ZXT10N50DE6 ZXT10N50DE6TA ZXT10N50DE6TC |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V
NPN Low Sat Transistor
50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR 50V NPN硅低饱和开关晶体管
|
ZETEX[Zetex Semiconductors]
Diodes Incorporated
Zetex Semiconductor PLC
|
| 2SB1268S 2SB1268R 2SB1269Q 2SB1135Q 2SB1269S 2SD19 |
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | TO-221VAR
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | TO-220
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | TO-220VAR
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis 晶体管|晶体管|叩| 50V五（巴西）总裁| 12A条一（c）|20
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 12A I(C) | TO-220VAR 晶体管|晶体管|进步党| 50V五（巴西）总裁| 12A条一（c）|20VAR
|
Sanyo Electric Co., Ltd.
|
| CDD2395F CDD2395 |
2.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 60 - 320 hFE.
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 3A I(C) | TO-220AB
|
Continental Device India Limited
|
| 2SB1143 2SD1683 2SB1143S |
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 4A I(C) | TO-126
50V/4A Switching Applications
|
SANYO[Sanyo Semicon Device]
|
| 2SA1012 2SA1012O 2SA1012Y |
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | TO-220AB
POWER TRANSISTORS(5A/50V/25W)
POWER TRANSISTORS(5A,50V,25W)
|
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| 2DC4617QLP-7B 2DC.617QLP-7 2DC.617QLP11 2DC4617QLP |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V
100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
50V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
|
Diodes Incorporated
|
| CFA1012 CFA1012O CFC2562O CFA1012Y CFC2562Y |
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 240 hFE. Complementary CFA1012Y
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFA1012O
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFC2562O
PNP SILICON PLANAR POWER TRANSISTOR 进步党硅平面功率晶体
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 120 - 240 hFE. Complementary CFC2562Y
|
Continental Device India, Ltd.
CDIL[Continental Device India Limited]
Continental Device Indi...
|
| DTA123YCAHZG DTA123YCAHZGT116 |
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)
|
ROHM
|
| 2SC3623-T 2SC3623-T/JM 2SC3623A-T 2SC3623A-T/JM 2S |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SPAK
Silicon transistor
|
NEC
|
| DTC113ZCAT116 |
NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor)
|
ROHM
|
| DTA114YCAT116 |
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)
|
ROHM
|
