| PART |
Description |
Maker |
| KESRX01 4 |
290 - 460MHz ASK Receiver
From old datasheet system
|
Zarlink
|
| FVG72-156Z |
Silicon-wafer Polycrystalline photovoltaic module with power peak from 275 W to 290 W
|
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| TISP4290J3BJR-S |
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS 290 V, 50 A, SILICON SURGE PROTECTOR, DO-214AA
|
Bourns, Inc.
|
| SD-130098-195 5594-006 1300980199 |
MAX-LOC Multi-Hole Strain Relief, 1/2 NPT, Straight Female, Cable Diameter 7.37mm (.290)
|
Molex Electronics Ltd.
|
| 1301800317 |
1/2 Cord Grip Grommet, F2 Body Size; 2 holes 7.37mm (.290) Cord Diameter, Black
|
Molex Electronics Ltd.
|
| APTGT200DH60G |
Asymmetrical - Bridge Trench Field Stop IGBT Power Module 290 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| 4553253300 2411102450 6512202030 6513202020/651320 |
WELDING RODS ZODIAN 2.5 90 Inhalt pro Packung: 290 Stk.
WELDING RODS NICREX E316 2.5 5 Inhalt pro Packung: 135 Stk.
WELDING RODS NICREX E308 2.0 9 Inhalt pro Packung: 129 Stk.
WELDING WIRE BOSTRAND 焊丝博斯特兰
WELDING RODS FEREX 7018L 2.5 Inhalt pro Packung: 70 Stk. 焊条福瑞018L 2.5 Inhalt亲Packung0沙头角
WELDING RODS 焊条
WELDING RODS FEREX UNI 4.0 Inhalt pro Packung: 90 Stk. 焊条福瑞祥用户到网络接口4.0 Inhalt亲Packung90沙头角
WELDING RODS 3.2MM Inhalt pro Packung: 180 Stk. 焊条3.2毫米Inhalt亲Packung180沙头角
|
3M Company
STMicroelectronics N.V.
PRECI-DIP SA
Crystek, Corp.
TE Connectivity, Ltd.
|
| SPT68H-113MXC SPT38L-733MXC SPT38L-752MXC SPT38L-2 |
1 ELEMENT, 11 uH, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 73 uH, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 7.5 uH, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 290 uH, GENERAL PURPOSE INDUCTOR, SMD
|
Coilcraft, Inc.
|
| RER45F2900RC02 RER50F1540RC02 RER75FR562RC02 R787R |
RES WW 290 OHM 1% 10W 20PPM/ C 0.01% AXL FLANGE MNT - Bulk
Wire Wound Resistor, RESISTOR, WIRE WOUND, 20 W, 1 %, 20 ppm, 154 ohm, CHASSIS MOUNT
Wire Wound Resistor, RESISTOR, WIRE WOUND, 30 W, 1 %, 100 ppm, 0.562 ohm, CHASSIS MOUNT
Wire Wound Resistor, RESISTOR, WIRE WOUND, 5 W, 1 %, 100 ppm, 0.787 ohm, CHASSIS MOUNT
Wire Wound Resistor, RESISTOR, WIRE WOUND, 10 W, 1 %, 50 ppm, 2.94 ohm, CHASSIS MOUNT
Wire Wound Resistor, RESISTOR, WIRE WOUND, 5 W, 1 %, 50 ppm, 2.94 ohm, CHASSIS MOUNT
Wire Wound Resistor, RESISTOR, WIRE WOUND, 30 W, 1 %, 100 ppm, 0.13 ohm, CHASSIS MOUNT
Wire Wound Resistor, RESISTOR, WIRE WOUND, 30 W, 1 %, 100 ppm, 0.133 ohm, CHASSIS MOUNT
Wire Wound Resistor, RESISTOR, WIRE WOUND, 30 W, 1 %, 100 ppm, 0.137 ohm, CHASSIS MOUNT
Wirewound Resistors, Military/Established Reliability MIL-PRF-39009 Qualified, Type RER, R Level
Wire Wound Resistor, RESISTOR, WIRE WOUND, 20 W, 1 %, 20 ppm, 105 ohm, CHASSIS MOUNT
Wire Wound Resistor, RESISTOR, WIRE WOUND, 20 W, 1 %, 20 ppm, 10000 ohm, CHASSIS MOUNT
Wire Wound Resistor, RESISTOR, WIRE WOUND, 20 W, 1 %, 20 ppm, 115 ohm, CHASSIS MOUNT
Wire Wound Resistor, RESISTOR, WIRE WOUND, 20 W, 1 %, 20 ppm, 1150 ohm, CHASSIS MOUNT
Wire Wound Resistor, RESISTOR, WIRE WOUND, 10 W, 1 %, 20 ppm, 1210 ohm, CHASSIS MOUNT
Wire Wound Resistor, RESISTOR, WIRE WOUND, 5 W, 1 %, 100 ppm, 0.121 ohm, CHASSIS MOUNT
Wire Wound Resistor, RESISTOR, WIRE WOUND, 10 W, 1 %, 50 ppm, 10 ohm, CHASSIS MOUNT
RES WW 103 OHM 1% 10W 20PPM/ C 0.01% AXL FLANGE MNT - Bulk
Wire Wound Resistor, RESISTOR, WIRE WOUND, 10 W, 1 %, 20 ppm, 100 ohm, CHASSIS MOUNT
Wire Wound Resistor, RESISTOR, WIRE WOUND, 10 W, 1 %, 20 ppm, 1000 ohm, CHASSIS MOUNT
RES WW 120 OHM 1% 10W 20PPM/ C 0.01% AXL FLANGE MNT - Bulk
Wire Wound Resistor, RESISTOR, WIRE WOUND, 20 W, 1 %, 100 ppm, 0.301 ohm, CHASSIS MOUNT
Wire Wound Resistor, RESISTOR, WIRE WOUND, 30 W, 1 %, 100 ppm, 0.301 ohm, CHASSIS MOUNT
Wire Wound Resistor, RESISTOR, WIRE WOUND, 5 W, 1 %, 100 ppm, 0.301 ohm, CHASSIS MOUNT
Wire Wound Resistor, RESISTOR, WIRE WOUND, 30 W, 1 %, 20 ppm, 11500 ohm, CHASSIS MOUNT
Wire Wound Resistor, RESISTOR, WIRE WOUND, 30 W, 1 %, 50 ppm, 10.7 ohm, CHASSIS MOUNT
Wire Wound Resistor, RESISTOR, WIRE WOUND, 30 W, 1 %, 20 ppm, 118 ohm, CHASSIS MOUNT
Wire Wound Resistor, RESISTOR, WIRE WOUND, 30 W, 1 %, 20 ppm, 113 ohm, CHASSIS MOUNT
Wire Wound Resistor, RESISTOR, WIRE WOUND, 5 W, 1 %, 50 ppm, 10.7 ohm, CHASSIS MOUNT
Wire Wound Resistor, RESISTOR, WIRE WOUND, 5 W, 1 %, 50 ppm, 11.5 ohm, CHASSIS MOUNT
Wire Wound Resistor, RESISTOR, WIRE WOUND, 10 W, 1 %, 20 ppm, 1100 ohm, CHASSIS MOUNT
Wire Wound Resistor, RESISTOR, WIRE WOUND, 10 W, 1 %, 50 ppm, 10.5 ohm, CHASSIS MOUNT
Wire Wound Resistor, RESISTOR, WIRE WOUND, 30 W, 1 %, 20 ppm, 121 ohm, CHASSIS MOUNT
Wire Wound Resistor, RESISTOR, WIRE WOUND, 30 W, 1 %, 50 ppm, 10 ohm, CHASSIS MOUNT
Wire Wound Resistor, RESISTOR, WIRE WOUND, 30 W, 1 %, 20 ppm, 100 ohm, CHASSIS MOUNT
Wire Wound Resistor, RESISTOR, WIRE WOUND, 20 W, 1 %, 20 ppm, 110 ohm, CHASSIS MOUNT
Wire Wound Resistor, RESISTOR, WIRE WOUND, 20 W, 1 %, 20 ppm, 1210 ohm, CHASSIS MOUNT
Wire Wound Resistor, RESISTOR, WIRE WOUND, 20 W, 1 %, 50 ppm, 11.8 ohm, CHASSIS MOUNT
Wire Wound Resistor, RESISTOR, WIRE WOUND, 20 W, 1 %, 20 ppm, 100 ohm, CHASSIS MOUNT
Wire Wound Resistor, RESISTOR, WIRE WOUND, 20 W, 1 %, 50 ppm, 10 ohm, CHASSIS MOUNT
Wire Wound Resistor, RESISTOR, WIRE WOUND, 20 W, 1 %, 20 ppm, 113 ohm, CHASSIS MOUNT
Wire Wound Resistor, RESISTOR, WIRE WOUND, 20 W, 1 %, 20 ppm, 124 ohm, CHASSIS MOUNT
|
Vishay Dale
Vishay Siliconix
|
| S29GL064M90FBIR00 S29GL064M90FCIR02 S29GL064M90FCI |
MOSFET, Switching; VDSS (V): 300; ID (A): 88; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.042; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5000; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 90; RDS (ON) typ. (ohm) @10V: 0.0046; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2500; toff (µs) typ: 0.07; Package: TO-220AB
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (S)- (2)
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (L)
MOSFET, Switching; VDSS (V): 150; ID (A): 70; Pch : -; RDS (ON) typ. (ohm) @10V: 0.022; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5100; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 200; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.036; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 200; ID (A): 96; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4900; toff (µs) typ: 0.22; Package: TO-3P
MOSFET, Switching; VDSS (V): 290; ID (A): 18; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.07; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 230; ID (A): 35; Pch : -; RDS (ON) typ. (ohm) @10V: 0.03; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5200; toff (µs) typ: -; Package: TO-3PFM
MOSFET, Switching; VDSS (V): 300; ID (A): 40; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.058; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5150; toff (µs) typ: 0.22; Package: TO-3P
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 3.0伏只页面模式闪存具有0.23微米工艺技术的MirrorBit
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 16M X 16 FLASH 3V PROM, 100 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 16 FLASH 3V PROM, 90 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 8 FLASH 3V PROM, 90 ns, PBGA63
MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.008; RDS (ON) typ. (ohm) @4V[4.5V]: 0.013 (5V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff (µs) typ: 0.055; Package: LDPAK (L)
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
|
