| PART |
Description |
Maker |
| TC58128FTI |
128M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
| TC58DVG02A1FT00 TC58DVG02A TC58DVG02A1FT |
Flash - NAND
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
1-GBIT (128M*8 BITS) CMOS NAND E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58V64DC |
16M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
| 4376 M27V401 M27V401-200B1TR M27V401-200B6TR M27V4 |
4 Mbit 512Kb x8 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x8低压紫外线EPROM和检察官办公室存储器
2.5-V/3.3-V 16-Bit Bus Transceiver With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85 4兆位512KB的x8低压紫外线EPROM和检察官办公室存储器
2.5-V/3.3-V 32-Bit Buffers/Drivers With 3-State outputs 96-LFBGA -40 to 85
Quadruple 2-Input Positive-NAND Gates 14-SOIC 0 to 70
2.5-V/3.3-V 16-Bit Bus Transceiver With 3-State Outputs 48-TSSOP -40 to 85
4 Mbit (512Kb x8) Low Voltage UV EPROM and OTP EPROM
From old datasheet system
4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| TH58100FT |
1-GBIT (128M x 8 BITS) CMOS NAND E2PROM
|
TOSHIBA
|
| MX27C256 MX27C256PC-10 MX27C256PC-12 MX27C256PC-15 |
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 55 ns, PDSO28
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 70 ns, PQCC32
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 70 ns, PDIP28
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 100 ns, PDIP28
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 120 ns, PDIP28
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 150 ns, PDIP28
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 90 ns, PDIP28
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 55 ns, PDIP28
|
PROM
Macronix International Co., Ltd.
|
| K9K4G08U1M K9F2G16U0M K9F2G08U0M |
256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| TC58256DC |
CMOS NAND EPROM
|
Toshiba Semiconductor
|
| K9K1G08U0M-YIB0 K9K1G08U0M-YCB0 |
128M x 8 Bit NAND Flash Memory
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K9W4G08U1M K9K2G16U0M K9W4G16U1M K9K2G08Q0M K9K2G0 |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9F1G08Q0A K9F1G08U0A K9F1G08Q0M |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| CY27C256 CY27C256-120 CY27C256-120JC CY27C256-120P |
32K x 8-Bit CMOS EPROM 32K X 8 UVPROM, 55 ns, CDIP28
32K x 8-Bit CMOS EPROM 32K X 8 OTPROM, 150 ns, PDSO32
CONN PLUG HOUSING HA SIZE2 UPPER
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
