| PART |
Description |
Maker |
| M6MGB331S8BKT M6MGT331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
| MR27V3202D |
2,097,152-Word x 16-Bit or 4,194,304-Word x 8-Bit One Time PROM
From old datasheet system
|
OKI
|
| MSM533202E |
2,097,152-Word x 16-Bit or 4,194,304-Word x 8-Bit MASKROM
From old datasheet system
|
OKI
|
| MSM6684B |
4,194,304-word x 1-bit Serial Register(4M×1串行话音寄存
|
OKI SEMICONDUCTOR CO., LTD.
|
| THMY644071BEG |
4/194/304-WORD BY 64-BIT SNCHRONOUS DRAM MODULE
4,194,304-WORD BY 64-BIT SNCHRONOUS DRAM MODULE
|
TOSHIBA[Toshiba Semiconductor]
|
| MR27V3202D |
2,097,152-Word x 16-Bit or 4,194,304-Word x 8-Bit One Time PROM
|
OKI electronic components
OKI[OKI electronic componets]
|
| MR27V3202E |
2,097,152-Word x 16-Bit or 4,194,304-Word x 8-Bit One Time PROM
|
OKI electronic components
OKI electronic componets
|
| GM71C17400 GM71C17400CJ GM71CS17400CL GM71C17400CL |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns
4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
x4 Fast Page Mode DRAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24
4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M
IC REG LDO 1A 12V SHDN TO220FP-5
null4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM
null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 50ns
4,194,304 words x 4 bit CMOS dynamic RAM, 70ns
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| MSM533202E |
2,097,152-Word x 16-Bit or 4,194,304-Word x 8-Bit MASKROM
|
OKI SEMICONDUCTOR CO., LTD.
|
| MSM533222E |
2,097,152-Word x 16-Bit or 4,194,304-Word x 8-Bit MASKROM
|
OKI[OKI electronic componets]
|
| AK594096BGP-70 AK594096BG AK594096BS AK594096BSP-6 |
4,194,304 Word by 9 Bit CMOS Dynamic Random Access Memory
|
http://
ACCUTEK MICROCIRCUIT CORPORATION
|
| 51W16165 |
4,194,304-Word ′ 0-Bit Dynamic Random Access Memory
From old datasheet system
|
hitachi
|
|
