| PART |
Description |
Maker |
| 6F80 12F 12F10 12F100 12F100B 12F10B 12F120 12F120 |
V(rrm): 1200V; 12A diffused silicon rectifier diode. For general pusposes: for battery chargers, converters, power supplies, machine tool controls
6,12 and 16 Amp Diffused Silicon Rectifier Diodes
|
IRF[International Rectifier]
|
| 0R8GU41 |
RECTIFIER SILICON DIFFUSED TYPE HIGH SPEED RECTIFIER APPLICATIONS
TOSHIBA RECTIFIER SILICON DIFFUSED TYPE
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| U1GU44 |
SUPER FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS
TOSHIBA SUPER FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| S8119 |
MOSFET, Switching; VDSS (V): 60; ID (A): 1.5; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.173]; RDS (ON) typ. (ohm) @2.5V: 0.207; Ciss (pF) typ: 200; toff (µs) typ: 0.035; Package: MPAK 图片集成电路光开
|
Hamamatsu Photonics K.K.
|
| S6968-01 |
MOSFET, Switching; VDSS (V): 60; ID (A): 2; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.111]; RDS (ON) typ. (ohm) @2.5V: 0.129; Ciss (pF) typ: 320; toff (µs) typ: 0.0397; Package: MPAK
|
Hamamatsu Photonics
|
| 1GU42 |
RECTIFIER SILICON DIFFUSED TYPE HIGH SPEED RECTIFIER APPLICATIONS (FAST RECOVERY)
|
TOSHIBA
|
| 1R5BZ41 1R5GZ41 |
Rectifier Silicon Diffused Type
|
TOSHIBA
|
| 1R5JZ41 1R5NZ41 |
Rectifier Silicon Diffused Type
|
TOSHIBA
|
| U10LC48 |
TOSHIBA RECTIFIER SILICON DIFFUSED TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| 2N2323 JANTX2N2323 JANTX2N2323A JANTX2N2323AS JANT |
SILICON CONTROLLED RECTIFIER
SILICON CONTROLLED RECTIFIER 0.3454 A, 200 V, SCR, TO-5
SILICON CONTROLLED RECTIFIER 1.6 A, 200 V, SCR, TO-205AD
LED RED DIFFUSED 1.8X3.5MM RECT SCR, TO-39
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| 2SC3583 |
NF 1.2 dB TYP. f = 1.0 GHz Ga 13 dB TYP. f = 1.0 GHz
NPN Silicon Epitaxial Transistor
|
TY Semiconductor Co., L...
TY Semicondutor
|
