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0475960132 - 0.9144mm (.036) by 0.9144mm (.036) Pitch LGA 1156 Desktop PC CPU Socket, 0.38μm (15μ) Gold (Au) Plating, with Pick-and-Place Cover, 1156Circuits, Leadfree

0475960132_1500281.PDF Datasheet
 Full text search : 0.9144mm (.036) by 0.9144mm (.036) Pitch LGA 1156 Desktop PC CPU Socket, 0.38μm (15μ) Gold (Au) Plating, with Pick-and-Place Cover, 1156Circuits, Leadfree

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 Fuji Electric Holdings Co., Ltd.
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 RENCO ELECTRONICS INC
0402CS-18NXJLU 0402CS-1N2XJLW 0402CS-5N1XJLU 0402C RF inductor, ceramic core, 5% tol, SMT, RoHS 1 ELEMENT, 0.018 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 5% tol, SMT, RoHS 1 ELEMENT, 0.0012 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 5% tol, SMT, RoHS 1 ELEMENT, 0.0051 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
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RF inductor, ceramic core, 5% tol, SMT, RoHS 1 ELEMENT, 0.1 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 5% tol, SMT, RoHS 1 ELEMENT, 0.12 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 5% tol, SMT, RoHS 1 ELEMENT, 0.0095 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 5% tol, SMT, RoHS 1 ELEMENT, 0.019 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 5% tol, SMT, RoHS 1 ELEMENT, 0.009 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
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RF inductor, ceramic core, 5% tol, SMT, RoHS 1 ELEMENT, 0.051 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
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RF inductor, ceramic core, 5% tol, SMT, RoHS 1 ELEMENT, 0.033 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
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RF inductor, ceramic core, 5% tol, SMT, RoHS 1 ELEMENT, 0.0047 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
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 Coilcraft, Inc.
Hynix Semiconductor, Inc.
COILCRAFT INC
WP3S-0.062OHMJA1 WP3S-0.091OHMJA1 WP3S-20R0JA1 WP3 RESISTOR, WIRE WOUND, 3 W, 5 %, 350 ppm, 0.062 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 3 W, 5 %, 350 ppm, 0.091 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 3 W, 5 %, 200 ppm, 20 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 3 W, 5 %, 350 ppm, 0.039 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 3 W, 1 %, 200 ppm, 20 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 5 W, 5 %, 350 ppm, 0.016 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 5 W, 5 %, 350 ppm, 0.02 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 5 W, 5 %, 350 ppm, 0.027 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 5 W, 5 %, 350 ppm, 0.03 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 5 W, 5 %, 350 ppm, 0.018 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 5 W, 5 %, 350 ppm, 0.036 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 5 W, 5 %, 350 ppm, 0.033 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 5 W, 5 %, 350 ppm, 0.039 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 5 W, 5 %, 350 ppm, 0.024 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 5 W, 5 %, 350 ppm, 0.091 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 5 W, 5 %, 350 ppm, 0.043 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 5 W, 5 %, 350 ppm, 0.015 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
Compact Flameproof Power Wirewound Resistors RESISTOR, WIRE WOUND, 2.5 W, 5 %, 200 ppm, 680 ohm, THROUGH HOLE MOUNT
Compact Flameproof Power Wirewound Resistors RESISTOR, WIRE WOUND, 2 W, 5 %, 200 ppm, 680 ohm, THROUGH HOLE MOUNT
Compact Flameproof Power Wirewound Resistors RESISTOR, WIRE WOUND, 3 W, 5 %, 200 ppm, 680 ohm, THROUGH HOLE MOUNT
 Welwyn Components, Ltd.
S29GL064M90FBIR00 S29GL064M90FCIR02 S29GL064M90FCI MOSFET, Switching; VDSS (V): 300; ID (A): 88; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.042; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5000; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 90; RDS (ON) typ. (ohm) @10V: 0.0046; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2500; toff (µs) typ: 0.07; Package: TO-220AB
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (S)- (2)
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (L)
MOSFET, Switching; VDSS (V): 150; ID (A): 70; Pch : -; RDS (ON) typ. (ohm) @10V: 0.022; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5100; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 200; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.036; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 200; ID (A): 96; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4900; toff (µs) typ: 0.22; Package: TO-3P
MOSFET, Switching; VDSS (V): 290; ID (A): 18; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.07; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 230; ID (A): 35; Pch : -; RDS (ON) typ. (ohm) @10V: 0.03; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5200; toff (µs) typ: -; Package: TO-3PFM
MOSFET, Switching; VDSS (V): 300; ID (A): 40; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.058; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5150; toff (µs) typ: 0.22; Package: TO-3P
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 3.0伏只页面模式闪存具有0.23微米工艺技术的MirrorBit
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 16M X 16 FLASH 3V PROM, 100 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 16 FLASH 3V PROM, 90 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 8 FLASH 3V PROM, 90 ns, PBGA63
MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.008; RDS (ON) typ. (ohm) @4V[4.5V]: 0.013 (5V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff (µs) typ: 0.055; Package: LDPAK (L)
 Spansion Inc.
Spansion, Inc.
SPANSION LLC
 
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