| PART |
Description |
Maker |
| S79FL256S |
256 Mbit (32 MB)/512 Mbit (64 MB), 3 V, Dual-Quad SPI Flash
|
Cypress Semiconductor
|
| M58PR512LE M58PR512LE96ZB5 M58PR256LE96ZB5 M58PR00 |
256-Mbit, 512-Mbit or 1-Gbit (】 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
|
STMicroelectronics
|
| NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
|
意法半导
STMicroelectronics N.V.
|
| CY14B104NA-BA20XI CY14B104NA-BA20XIT CY14B104NA-BA |
4-Mbit (512 K ? 8/256 K ? 16) nvSRAM
4-Mbit (512 K × 8/256 K × 16) nvSRAM
|
Cypress Semiconductor
http://
|
| M39P0R9080E0ZAD M39P0R9080E0ZADE M39P0R9080E0ZADF |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 256 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package
|
Numonyx B.V
|
| CY14B104LA-ZS20XI CY14B104NA-ZS20XI CY14B104NA-ZS2 |
4-Mbit (512 K x 8/256 K x 16) nvSRAM 20 ns, 25 ns, and 45 ns access times
|
Cypress Semiconductor
http://
|
| M29W400DT07 M29W400DB55M1 M29W400DB55M1E M29W400DB |
4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block) 3 V supply Flash memory
|
STMicroelectronics
|
| IDT7202LA IDT7202LA120D IDT7202LA120DB IDT7202LA12 |
CMOS ASYNCHRONOUS FIFO 256 x 9 512 x 9 1K x 9
60A, 400V UItrafast Rectifier; Package: TO-247; No of Pins: 2; Container: Rail
CMOS ASYNCHRONOUS FIFO 256 x 9 / 512 x 9 / 1K x 9
CMOS ASYNCHRONOUS FIFO 256 x 9/ 512 x 9/ 1K x 9
20 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
Ultrafast IGBT
RES 205K-OHM 1% 0.063W 100PPM THK-FILM SMD-0402 TR-7-PA2MM
400V N-Channel Logic Level IGBT; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel
30A/200V Ultra Fast Recovery Rectifier Co-Pak; Package: TO-3P; No of Pins: 3; Container: Rail
6A/1500V Damper and 20A/600V Modulation Diode; Package: TO-220F; No of Pins: 3; Container: Rail
Quad, High Speed, 2.7V to 12V, Rail to Rail Amplifier; Package: TSSOP; No of Pins: 14; Container: Rail
Quad, High Speed, 2.7V to 12V, Rail to Rail Amplifier; Package: TSSOP; No of Pins: 14; Container: Tape & Reel
High Performance Amplifier; Package: TSSOP; No of Pins: 14; Container: Tape & Reel
High Performance Amplifier; Package: SOIC; No of Pins: 14; Container: Tape & Reel
High Performance Multiplexer; Package: SOIC; No of Pins: 14; Container: Tape & Reel
Quad, High Speed, 2.7V to 12V, Rail to Rail Amplifier; Package: SOIC; No of Pins: 14; Container: Tape & Reel
High Performance Multiplexer; Package: TSSOP; No of Pins: 14; Container: Tape & Reel
S-Interface 16 Pin DIP (BSEN60950), RoHS compatible CMOS异步FIFO56 × 912 × 9，每1000 × 9
Single, High Speed, 2.5V to 12V, Rail to Rail Amplifier CMOS异步FIFO56 × 912 × 9，每1000 × 9
1200V NPT-Trench IGBT; Package: TT3P0; No of Pins: 3; Container: Rail 1K X 9 OTHER FIFO, 15 ns, PDIP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 15 ns, PDSO28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 80 ns, CDFP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 CMOS异步FIFO56 × 912 × 9，每1000 × 9
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 120 ns, CDFP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 12 ns, CDIP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 12 ns, PDIP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 35 ns, PDIP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 35 ns, PDSO28
1200V NPT IGBT; Package: TO-264; No of Pins: 3; Container: Rail 1K X 9 OTHER FIFO, 35 ns, PDSO28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 30 ns, CQCC32
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 30 ns, CDIP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 30 ns, CDFP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 30 ns, PDIP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 120 ns, CQCC32
1200V NPT-Trench IGBT CMOS异步FIFO56 × 912 × 9，每1000 × 9
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 20 ns, CDIP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 120 ns, CDIP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 120 ns, CDFP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 120 ns, PDSO28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 25 ns, CDIP28
Octal Buffers And Line/MOS Drivers With 3-State Outputs 20-SOIC -40 to 85 CMOS异步FIFO56 × 912 × 9，每1000 × 9
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 65 ns, CQCC32
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 65 ns, PQCC32
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 65 ns, PDIP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 65 ns, CDFP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 50 ns, PDIP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 50 ns, PQCC32
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 50 ns, CDFP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 40 ns, PDSO28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 65 ns, PQCC32
|
INTEGRATED DEVICE TECHNOLOGY INC
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| NAND256-A NAND01G-A NAND01GW3A2AZB1 NAND01GW3A0AZB |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位1千兆位（x8/x1628 Byte/264字的页面1.8V/3V，NAND闪存芯片
128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63
8M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
64M X 8 FLASH 3V PROM, 35 ns, PBGA55
64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
128M X 8 FLASH 3V PROM, 35 ns, PDSO48
8M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PBGA55
|
ST Microelectronics
意法半导
STMicroelectronics N.V.
NUMONYX
http://
|
| AM41PDS3224DB35IS AM41PDS3224DB40IS AM41PDS3224DT1 |
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位米16位）.8伏的CMOS只，同时操作，页面模式闪存和4兆位12亩x 8-Bit/256亩x 16位），静态存储器
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位米16位）1.8伏的CMOS只，同时操作，页面模式闪存和4兆位12亩x 8-Bit/256亩x 16位），静态存储器
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM SPECIALTY MEMORY CIRCUIT, PBGA73
|
Advanced Micro Devices, Inc.
|
| SST31LF043A-70-4C-WI SST31LF041-300-4E-WH SST31LF0 |
4 Mbit Flash 1 Mbit or 256 Kbit SRAM ComboMemory 4 Mbit闪存1兆位56千位的SRAM ComboMemory
4 Mbit Flash 1 Mbit or 256 Kbit SRAM ComboMemory 4 Mbit闪存1兆位56千位SRAM ComboMemory
4 Mbit Flash 1 Mbit or 256 Kbit SRAM ComboMemory SPECIALTY MEMORY CIRCUIT, PDSO32
XTAL MTL SMT HC49/USM 4 Mbit闪存1兆位56千位的SRAM ComboMemory
XTAL CER SMT 7X5 2PAD
16-Bit Delta-Sigma ADC with internal reference, PGA and oscillator. I2C Serial Interface 6-SOT-23
DIODE SWITCH 75V 350MW SOT-23
RECTIFIER SCHOTTKY SINGLE 5A 60V 175A-Ifsm 0.7Vf 0.5A-IR SMC 3K/REEL
|
SILICON STORAGE TECHNOLOGY INC
Silicon Storage Technology, Inc.
|
| AM41PDS3224DT10IS AM41PDS3224DT100IS AM41PDS3224DT |
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
|
AMD[Advanced Micro Devices]
|
|
