| PART |
Description |
Maker |
| UPA1716 UPA1716G PA1716 UPA1716G-E1 UPA1716G-E2 |
Pch enhancement type power MOS FET
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
MOS Field Effect Transistor
|
NEC[NEC]
|
| 2SK2132 2SK2132-T |
High-voltage power MOS FET 180V/4A
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| 2SK2887 A5800304 |
Transistors > MOS FET > Power MOS FET
Switching (200V, 3A)
From old datasheet system
|
ROHM[Rohm]
|
| 2SK2792 A5800302 |
Transistors > MOS FET > Power MOS FET
From old datasheet system
Switching (600V, 4A)
|
ROHM
|
| 2SK2724 D10515EJ1V0DS00 |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
From old datasheet system
MOS Field Effect Power Transistors
|
NEC[NEC]
|
| 2SK410 |
RF POWER, FET
From old datasheet system
Silicon N-Channel MOS FET (HF/VHF power amplifier)
|
Hitachi Semiconductor
|
| 2SK1760 |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
MOS Field Effect Power Transistor
|
NEC[NEC]
|
| M68732LA 68732LA |
400 MHz - 450 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
From old datasheet system
Silicon MOS FET Power Amplifier, 400-450MHz 7W FM PORTABLE
SILICON MOS FET POWER AMPLIFIER, 400-450MHz, 7W, FM PORTABLE
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 400-450 MHz 7W FM PORTABLE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| 2SK3022TENTATIVE |
2SK3022 (Tentative) - N-Channel Power F-MOS FET
Power F-MOS FETs
|
Matsshita / Panasonic
|
| MP6404 |
TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
| NP80N04NHE NP80N04NHE-S18-AY NP80N04DHE NP80N04DHE |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
|
NEC
|
