| PART |
Description |
Maker |
| HY5V56BLF-I HY5V56BF-I |
16Mx16|3.3V|8K|H/8/P/S|SDR SDRAM - 256M 16Mx16显示| 3.3 | 8K的| H/8/P/S |特别提款权的SDRAM - 256M
|
Omron Electronics, LLC
|
| HY5DU561622FTP-4 HY5DU561622FTP-5 HY5DU561622FLTP- |
256M(16Mx16) DDR SDRAM
|
Hynix Semiconductor
|
| M464S1654BT1 M464S1654BT1-C1H M464S1654BT1-C1L M46 |
16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
|
Samsung semiconductor
|
| HYB25L128160AC-7.5 HYE25L128160AC-7.5 |
Specialty DRAMs - 128M (8Mx16) 133MHz 3-3-3
Specialty DRAMs - 128M (8Mx16) 133MHz 3-3-3 Ext. Temp
|
Infineon
|
| MR18R162GAF0 MR16R162GAF0 MR18R1624AF0 MR18R1622AF |
64M X 16 RAMBUS MODULE, DMA184
TVS 500W 6.5V BIDIRECT DO-15 6Mx16显示）2/8/16）件RIMM的模块，基于256Mb阿芯片，32秒银行，16K/32ms参考，.5V
16Mx16显示）2/8/16）件RIMM的模块，基于256Mb阿芯片，32秒银行，16K/32ms参考，.5V
(MR18R1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
(MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| K4X56163PI-LFE/GC3 K4X56163PI-LFE/GC6 |
16Mx16 Mobile DDR SDRAM
|
Samsung semiconductor
|
| M464S0924CT2 M464S1724CT2 |
8M x 64 SDRAM SODIMM based on 8M x 16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Datasheet
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Serial Presence Detect
|
Samsung Electronic
|
| MR18R16224/8/GAF0 |
(16Mx16)*2(4/8/16)pcs RIMMModule based on 256Mb A-die Data Sheet
|
Samsung Electronic
|
| EDJ1104BBSE-DG-F EDJ1104BBSE-DJ-F EDJ1108BBSE-DJ-F |
1G bits DDR3 SDRAM
256M X 4 DDR DRAM, 0.4 ns, PBGA78
256M X 4 DDR DRAM, 0.3 ns, PBGA78
|
Elpida Memory
ELPIDA MEMORY INC
|
