| PART |
Description |
Maker |
| MA4ZD03 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD) Silicon epitaxial planar type
|
Panasonic Semiconductor
|
| BAT721 1PS76SB21 1PS76SB21-15-15 BAT721C BAT721S B |
Planar Schottky barrier diodes with an integrated guard ring for stress protection. Encapsulated in small Surface-Mounted Device (SMD) plastic packages.
Schottky barrier diodes in small packages
|
NXP Semiconductors
|
| MA745 MA3J745 MA3J745MA745 |
Schottky Barrier Diodes (SBD)
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
|
PANASONIC[Panasonic Semiconductor]
|
| MA3J745E MA3J745D MA745WA MA745WK |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD)
|
Matsshita / Panasonic
|
| HSB88WA |
Schottky Barrier Diodes for Detection and Mixer
SILICON SCHOTTKY BARRIER DIODE FOR HIGH SPEED SWITCHING
|
HITACHI[Hitachi Semiconductor]
|
| HSB88WK |
Schottky Barrier Diodes for Detection and Mixer
SILICON SCHOTTKY BARRIER DIODE FOR HIGH SPEED SWITCHING
|
HITACHI[Hitachi Semiconductor]
|
| SB0203EJ |
Small Signal Schottky Barrier Diodes
Schottky Barrier Diode 30V, 200mA Rectifier
|
Sanyo Semiconductor
Sanyo Semicon Device
|
| SB1003EJ |
Small Signal Schottky Barrier Diodes
SCHOTTKY BARRIER DIODE 30V, 1A RECTIFIER
|
SANYO[Sanyo Semicon Device]
|
| BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSE |
Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
Schottky barrier double diodes
|
NXP Semiconductors / Philips Semiconductors
PHILIPS[Philips Semiconductors]
|
