| PART |
Description |
Maker |
| FDD663710 |
P-Channel PowerTrench? MOSFET -35V, -21A, 18mΩ
|
Fairchild Semiconductor
|
| IRG4PH40U |
41 A, 1200 V, N-CHANNEL IGBT, TO-247AC
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极晶体管（VCES和\u003d 1200伏，的Vce（on）典\u003d 2.43V，@和VGE \u003d 15V的，集成电路\u003d 21A条）
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A)
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRG4PH40UD IRG4PH40UD-E |
41 A, 1200 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极型晶体管，超快软恢复二极管（VCES和\u003d 1200伏，的Vce（on）典\u003d 2.43V，@和VGE \u003d 15V的，集成电路\u003d 21A条）
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A)
1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| 4789.1100 |
IEC Power Connector; Voltage Rating:250V; Mounting Type:Cable; Current Rating:21A; Body Material:Thermoplastic RoHS Compliant: Yes
|
SCHURTER INC
|
| 531JY-431103A |
RF COAXIAL RELAY, SP3T, LATCHED, 0.21A (COIL), 28VDC (COIL), 5880mW (COIL), 40000MHz, 30W (RF INPUT), PANEL MOUNT
|
DOW-KEY MICROWAVE CORP
|
| APT5022AVR |
POWER MOS V 500V 21A 0.220 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT6030 APT6030BVFR |
POWER MOS V 600V 21A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT6029BFLL APT6029SFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 600V 21A 0.290 Ohm
|
Advanced Power Technolo...
Advanced Power Technology
|
| BUZ21L BUZ21LE3045 |
N-Channel SIPMOS Power Transistor
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=0.085 Ohm, 21A, LL
SIPMOS Power Transistor
|
Infineon Technologies AG
|
| BTS441T BTS441TG BTS441TS Q67060-S6112-A4 Q67060-S |
High Speed CMOS Logic Dual 4-Input NOR Gates 14-SO -55 to 125
Smart High Side Switches - 4,75-41V, 20mΩ 21A TO220
Smart Highside Power Switch One Channel: 20mз
Smart Highside Power Switch One Channel: 20m?/a>
|
INFINEON[Infineon Technologies AG]
|
| BTS441R BTS441 BTS441RG BTS441RS Q67060-S6119 Q670 |
Smart Highside Power Switch One Channel: 20mз Status Feedback
IC,PERIPHERAL DRIVER,1 DRIVER,CMOS/MOS,SIP,5PIN,PLASTIC
From old datasheet system
Smart Highside Power Switch One Channel: 20m Status Feedback
Smart High Side Switches - 4,75-41V, 20mΩ 21A TO220 or TO 263
Smart Highside Power Switch One Channel: 20m?/a> Status Feedback
|
INFINEON[Infineon Technologies AG]
|
