| PART |
Description |
Maker |
| DS1265W-100IND |
3.3V 8Mb Nonvolatile SRAM 1M X 8 NON-VOLATILE SRAM MODULE, 100 ns, DMA36
|
Maxim Integrated Products, Inc.
Dallas Semiconductor
|
| GS78108AB-10I GS78108AGB-10IT |
1M x 8 8Mb Asynchronous SRAM 1M X 8 STANDARD SRAM, 10 ns, PBGA119
|
GSI Technology, Inc.
|
| IBM0418A8ACLAB IBM0436A4ACLAB |
8Mb( 512K x 18 ) SRAM(8Mb( 512K x 18 )寄存器锁存模式的同步CMOS静态RAM)
4Mb( 128K x 36 ) SRAM(4Mb( 128K x 36 )寄存器锁存模式的同步CMOS静态RAM) 4Mb的（128K的36）的SRAMMb的（128K的36）寄存器锁存模式的同步的CMOS静态RAM）的
|
IBM Microeletronics
International Business Machines, Corp.
|
| N08L6182AB27I N08L6182AB27IT N08L6182AB7I N08L6182 |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 隆驴 16bit
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K ? 16bit
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit
8 Mb, 1.8 V Low Power SRAM; Package: BGA Green; No of Pins: 48; Container: Tray; Qty per Container: 300 512K X 16 STANDARD SRAM, 85 ns, PBGA48
8 Mb, 1.8 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tray; Qty per Container: 300 512K X 16 STANDARD SRAM, 85 ns, PBGA48
|
ON Semiconductor
|
| MT58L512L18D |
(MT58Lxxxx) 8Mb SYNCBURST SRAM
|
Micron Semiconductor
|
| GS78108B-10 |
10ns 1M x 8 8Mb asynchronous SRAM
|
GSI Technology
|
| GS78132AB-10I GS78132AB-15I GS78132AB-8 GS78132AB- |
256K x 32 8Mb Asynchronous SRAM 256K X 32 STANDARD SRAM, 8 ns, PBGA119
|
GSI Technology, Inc.
GSI[GSI Technology]
|
| DS1265W DS1265W-DS1265W-150 DS1265W-100 DS1265W-15 |
3.3V 8Mb Nonvolatile SRAM
From old datasheet system
|
MAXIM - Dallas Semiconductor
Dallas Semiconducotr
|
| MT58L256L3 MT58L256L32D |
8Mb Syncburst SRAM, 3.3V Vdd, 3.3V I/O, Pipelined, Dcd,
|
MICRON
|
| N08L163WC2A |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 】 16 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
