| PART |
Description |
Maker |
| PBSS301PD |
4A PNP low VCEsat (BISS) transistor PNP low VCEsat Breakthrough
|
NXP
|
| IXGH38N60 |
Ultra-Low VCE(sat) IGBT(1.8V超低VCE(sat)的绝缘栅双极晶体 75 A, 600 V, N-CHANNEL IGBT, TO-247AD
|
IXYS, Corp.
|
| PBSS3540M PBSS3540M315 |
40 V, 0.5 A PNP low VCEsat (BISS) transistor; Package: SOT883 (SC-101); Container: Tape reel smd 500 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
40 V. 0.5 A PNP low VCEsat (BISS) transistor
|
NXP Semiconductors N.V.
Philips
|
| PBSS4350SPN PBSS4350SPN115 PBSS4350SPN-15 |
50 V, 2.7 A NPN-PNP low VCEsat (BISS) transistor
50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor; Package: SOT96-1 (SO8); Container: Tape reel smd
|
NXP Semiconductors N.V.
|
| PBSS5230T PBSS5220T PBSS5220T215 |
20V, 2A PNP low VCEsat (BISS) transistor
20 V; 2 A PNP low VCEsat (BISS) transistor; Package: SOT23 (TO-236AB); Container: Tape reel smd 2000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| IXGN400N30A3 |
Ultra-Low-Vsat PT IGBT for up to 10kHz Switching
|
IXYS Corporation
|
| PBSS4520X PBSS4520X-15 |
20 V, 5 A NPN low VCEsat (BISS) transistor 20伏，5安NPN型低饱和压降（BISS）晶体管
NPN low VCEsat (BISS) transistor 20 V, 5 A
|
NXP Semiconductors N.V.
|
| GA2.0TS60U |
HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT
|
International Rectifier
|
| GA200TS60U |
HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT
|
IRF[International Rectifier]
|
| SGH80N60UF SGH80N60 SGH80N60UFTU |
Discrete, High Performance IGBT
Ultra-Fast IGBT
CONNECTOR ACCESSORY
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| SGS6N60UFD SGS6N60UFDTU |
Discrete, High Performance IGBT with Diode
Ultra-Fast IGBT
|
Fairchild Semiconductor
|
