| PART |
Description |
Maker |
| HYE18P16161ACL85 HYE18P16161AC HYE18P16161AC-70 HY |
Specialty DRAMs - 1Mx16, VFBGA-48; Available 2Q04
Specialty DRAMs - 1Mx16, VGBGA-48; Available 2Q04
16M Asynchronous/Page CellularRAM
|
INFINEON[Infineon Technologies AG]
|
| HY5DU281622ET-30 HY5DU281622ET-25 HY5DU281622ET-5 |
128M(8Mx16) GDDR SDRAM
|
Hynix Semiconductor Inc.
|
| CMS4A16LAF CMS4A16LAG CMS4A16LAH |
128M(8Mx16) Low Power SDRAM
|
FIDELIX
|
| CMS4A16LAX-75XX |
128M(8Mx16) Low Power SDRAM
|
FIDELIX
|
| K3P9VU1000A-YC |
128M-Bit (16Mx8 /8Mx16) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
| M464S0924CT2 M464S1724CT2 |
8M x 64 SDRAM SODIMM based on 8M x 16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Datasheet
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Serial Presence Detect
|
Samsung Electronic
|
| CMS4A16LAF |
128M(8Mx16) Low Power SDRAM
|
FIDELIX
|
| HY57V28162 HY57V281620A HY57V281620ALT-HI HY57V281 |
4 Banks x 2M x 16bits Synchronous DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
8Mx16|3.3V|4K|K|SDR SDRAM - 128M
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| HY57V28420HCLT-H HY57V28420HCLT-K HY57V28420HCLT |
32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
SDRAM - 128Mb
32Mx4|3.3V|4K|6/K/H/8/P/S|SDR SDRAM - 128M 32Mx4 | 3.3 | 4K的| 6/K/H/8/P/S |特别提款权的SDRAM - 128M
|
HYNIX SEMICONDUCTOR INC
TE Connectivity, Ltd.
|
| TH58NS100DC |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 - GBIT (128M X 8 BITS) CMOS NAND E2PROM ( 128M BYTE SmartMediaTM )
|
Toshiba Semiconductor
|
| AM29PDL127H63VKI |
IC,EEPROM,NOR FLASH,8MX16,CMOS,BGA,80PIN,PLASTIC
|
amd
|
