| PART |
Description |
Maker |
| RM200DG-130S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM300DG-90S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| FZ500R65KE3 |
high insulated module
|
Infineon Technologies AG
|
| FM400TU-3A09 |
MOSFET MODULE HIGH POWER SWITCHING USE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
| FM400TU-07A09 |
MOSFET MODULE HIGH POWER SWITCHING USE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
| PS21342-N |
DIP - IPM
MITSUBISHI SEMICONDUCTOR Power Module TRANSFER-MOLD TYPE INSULATED TYPE
MITSUBISHI SEMICONDUCTOR TRANSFER-MOLD TYPE INSULATED TYPE
Intelligent Power Module TRANSFER-MOLD TYPE INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
Powerex Power Semiconductors
|
| UFB120FA20 |
Insulated Ultrafast Rectifier Module
|
IRF[International Rectifier]
|
| UFB60FA20P |
Insulated Ultrafast Rectifier Module, 60 A
|
Vishay Siliconix
|
| UFB60FA60P |
Insulated Ultrafast Rectifier Module, 60 A
|
Vishay Siliconix
|
| UFB280FA40 |
Insulated Ultrafast Rectifier Module, 280 A
|
Vishay Siliconix
|
| UFB200FA40P UFB200FA40P10 |
Insulated Ultrafast Rectifier Module, 200 A
|
Vishay Siliconix
|
| VS-UFB130FA20 |
Insulated Ultrafast Rectifier Module, 130 A
|
Vishay Siliconix
|
