| PART |
Description |
Maker |
| KM29W040AT KM29W040AIT |
V(cc): 2.7 -3.6V; 512M x 8 bits NAND flash memory
512K x 8 bit NAND Flash Memory
|
Samsung semiconductor
Samsung Electronic
|
| CY7C68023-56LTXC |
EZ-USB NX2LP USB 2.0 NAND Flash Controller 3.3 V NAND Flash Operation
|
Cypress Semiconductor
|
| K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P |
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| AT49F512-70TC AT49F512 AT49F512-70VC AT49F512-70VI |
Quadruple 2-Input Positive-NAND Gate 14-SOIC -40 to 125 64K X 8 FLASH 5V PROM, 90 ns, PDSO32
Quadruple 2-Input Positive-NAND Gate 14-SSOP -40 to 125 64K X 8 FLASH 5V PROM, 90 ns, PDIP32
512K 64K x 8 5-volt Only Flash Memory
|
Atmel, Corp.
PROM
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| HY27UG088G5B HY27UG088GDB HY27UG088G5B-TIP |
8Gb NAND FLASH
FLASH 3.3V PROM, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, PLASTIC, TSOP1-48
|
Hynix Semiconductor, Inc.
|
| K9F8008W0M- K9F8008W0M-TCB0 K9F8008W0M-TIB0 K9K120 |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
1M x 8 bit NAND Flash Memory
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| TC58DVM72A1FTI |
Flash - NAND
|
TOSHIBA
|
| TC58DVM82A1XBJ1 |
Flash - NAND
|
TOSHIBA
|
| UCY74A30N UCY74A00N UCY74A10N UCY74A20N UCY74A10 U |
3 V FIPS-140 security supervisor with battery switchover UCY74A30 -啊俄iowej躲艾奥瓦bramka闪存
UKLADY SCALONE CYFROWE
Trzykrotna trzywejciowa bramka NAND
Dwukrotna czterowejciowa bramka NAND
Omiowejciowa bramka NAND
Czterokrotna dwuwejciowa bramka NAND
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC[ETC]
Ultra CEMI
|
| 29F32G08C |
NAND Flash Memory
|
Micron
|
