| PART |
Description |
Maker |
| MN102H950F |
Microcomputer - 16bit - General Purpose
|
Panasonic
|
| MN102H60G MN102HF60G MN102H60 MN102H60K MN102HF60 |
Microcomputer - 16bit - General Purpose
Microcomputers/Controllers
MN102H60G , MN102H60K
|
PANASONIC[Panasonic Semiconductor]
http://
|
| M38067MC-453GP M38063M6-181GP M38067MC-204FP M3806 |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER
Single Chip 8-Bit CMOS Microcomputer
Single Chip 8-bit Microcomputer
3806 Series Microcontrollers: General Purpose, Large On-Chip Memory
RAM size: 1024bytes; single-chip 8-bit CMOS microcomputer
RAM size: 192bytes; single-chip 8-bit CMOS microcomputer
RAM size: 256bytes; single-chip 8-bit CMOS microcomputer
RAM size: 384bytes; single-chip 8-bit CMOS microcomputer
RAM size: 512bytes; single-chip 8-bit CMOS microcomputer
RAM size: 640bytes; single-chip 8-bit CMOS microcomputer
RAM size: 768bytes; single-chip 8-bit CMOS microcomputer
RAM size: 896bytes; single-chip 8-bit CMOS microcomputer
|
Mitsubishi Electric Corporation
|
| MN102H73K MN102H73G MN102H730F MN102H73 MN102H730 |
Microcomputer - 16bit - General Purpose
With main clock operated 58 ns (at 3.0 V to 3.6 V, 34 MHz)
With main clock operated 58 ns (at 3.0 V to 3.6 V 34 MHz)
|
PANASONIC[Panasonic Semiconductor]
Panasonic Corporation
|
| HY51VS18163HG HY51V18163HGT-6 HY51V18163HGJ HY51V1 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power
1M x 16Bit EDO DRAM 100万16 EDO公司的DRAM
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 60 ns, PDSO44
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor, Inc.
|
| MN103SF92GBL MN103S927 MN103S92A |
MICROCOMPUTER LSI 32-BIT, MROM, 10 MHz, MICROCONTROLLER, PQFP64
Microcomputer - 32bit - General Purpose
|
Panasonic, Corp.
Panasonic Semiconductor
|
| TMP68HC11E1T-3 TMP68HC11E9 |
Transient Voltage Suppressor Diodes
THE TMP68HC05C4 CMOS MICROCOMPUTER IS A MEMBER OF THE 68HC05 FAMILY OF LOW-COST SINGLE-CHIP MICROCOMPUTER 微机的CMOS的TMP68HC05C4是低成本的单家庭成员68HC05的单片机
|
Toshiba, Corp.
|
| HY51VS65163HG HY51VS65163HGJ-45 HY51VS65163HGJ-5 H |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power
|
Hynix Semiconductor
|
| HY57V641620HGT-6 HY57V641620HGT-7 HY57V641620HGT-5 |
4 Banks x 1M x 16Bit Synchronous DRAM 4银行× 1米16位同步DRAM
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| A43L2616V-6PH A43L2616V-7PH |
Cycle time:6ns; 166MHz CL=3 access time:5.0ns 1M x 16bit x 4banks synchronous DRAM
Cycle time:7ns; 143MHz CL=3 access time:5.4ns 1M x 16bit x 4banks synchronous DRAM
|
AMIC Technology
|
| KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM41 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
|
Samsung Electronic
|
| AK4564VQ AK4564 AKD4564 |
16bit Mic/Hp/Spk AMP & D-ALC/EQ
16BIT CODEC WITH BUILT-IN ALC AND MIC/HP/SPK-AMP
|
AKM
Asahi Kasei Microsystems
|
