| PART |
Description |
Maker |
| MHC-GX470 MHC-RG290 |
(MHC-xxxx) Mini Hi-Fi Somponent System
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Sony
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| M68HC711CFD M68HC711CFG M68HC711CFG_D M68HC711CFG/ |
CONFIG Register Programming for EEPROM-based M68HC11 Microcontrollers CONFIG REGISTER PROGRAMMING FOR EEPROM-BASED MHC MICROCONTROLLERS
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MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc] Motorola, Inc. Freescale (Motorola)
|
| TO-263-5 |
A : MIN 9.800 MAX 10.668 B : MIN 8.200 MAX 9.169
|
Analog Microelectronics
|
| PDIP-40 |
A : MIN 3.300 MAX 4.200 B : MIN 0.018 MAX 0.570
|
Analog Microelectronics
|
| NX8563LF646-BA NX8563LB646-BA NX8563LB6040-BA NX85 |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1564.67 nm. Frequency 191.60 THz. FC-PC connector. Anode floating. CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1564.67 nm. Frequency 191.60 THz. FC-PC connector. Anode ground. CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1604.02 nm. Frequency 186.90 THz. FC-PC connector. Anode ground. CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1604.88 nm. Frequency 186.80 THz. FC-PC connector. Anode ground. CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1559.78 nm. Frequency 192.20 THz. FC-PC connector. Anode floating. CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1529.55 nm. Frequency 196.00 THz. FC-PC connector. Anode ground. CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1590.41 nm. Frequency 188.50 THz. FC-PC connector. Anode floating. CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1602.31 nm. Frequency 187.10 THz. FC-PC connector. Anode ground. CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1538.07 nm. Frequency 194.80 THz. FC-PC connector. Anode floating. CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1553.32 nm. Frequency 193.00 THz. FC-PC connector. Anode floating. CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1581.18 nm. Frequency 189.60 THz. FC-PC connector. Anode ground. CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1581.18 nm. Frequency 189.60 THz. FC-PC connector. Anode floating. CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1587.04 nm. Frequency 188.90 THz. FC-PC connector. Anode floating. CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1569.59 nm. Frequency 191.00 THz. FC-PC connector. Anode ground. CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1597.18 nm. Frequency 187.70 THz. FC-PC connector. Anode ground. CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1598.04 nm. Frequency 187.60 THz. FC-PC connector. Anode ground. CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1592.94 nm. Frequency 188.20 THz. FC-PC connector. Anode ground. CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1592.10 nm. Frequency 188.30 THz. FC-PC connector. Anode ground. CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1599.74 nm. Frequency 187.40 THz. FC-PC connector. Anode ground. CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1574.54 nm. Frequency 190.40 THz. FC-PC connector. Anode ground. CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1571.23 nm. Frequency 190.80 THz. FC-PC connector. Anode ground. CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1572.88 nm. Frequency 190.60 THz. FC-PC connector. Anode ground. CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1567.95 nm. Frequency 191.20 THz. FC-PC connector. Anode ground. CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1607.46 nm. Frequency 186.50 THz. FC-PC connector. Anode ground. CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1607.46 nm. Frequency 186.50 THz. FC-PC connector. Anode floating. CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1582.01 nm. Frequency 189.50 THz. FC-PC connector. Anode ground. CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1582.85 nm. Frequency 189.40 THz. FC-PC connector. Anode ground. CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1582.01 nm. Frequency 189.50 THz. FC-PC connector. Anode floating. CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1582.85 nm. Frequency 189.40 THz. FC-PC connector. Anode floating. CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1584.52 nm. Frequency 189.20 THz. FC-PC connector. Anode floating. CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1584.52 nm. Frequency 189.20 THz. FC-PC connector. Anode ground. CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1583.69 nm. Frequency 189.30 THz. FC-PC connector. Anode floating.
|
NEC
|
| 2PA1774Q115 |
PNP general-purpose transistor - Complement: 2PC4617Q ; fT min: 100 MHz; hFE max: 270 ; hFE min: 120 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 150 mW; VCEO max: 40 V; Package: SOT416 (SC-75); Container: Tape reel smd
|
NXP SEMICONDUCTORS
|
| TO-263-3 |
(D2 PAK) A : MIN 9.65 MAX 10.67 B : MIN 8.28 MAX 9.66
|
Analog Microelectronics
|
| CX380D5 |
Solid-State PC Board Relay; Output Device:SCR; Output Voltage Max:530Vrms; Output Voltage Min:48Vrms; Control Voltage Max:15VDC; Control Voltage Min:4VDC; Load Current Max:5A; Switching:Zero Cross; Operating Voltage Max:530V
|
CRYDOM CORP
|
| AM29LV800DB-120SD AM29LV800DB-120ED AM29LV800DB-12 |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory Time-Delay Relay; Time Range:0.1 sec. to 30 sec.; Mounting Type:Plug In; Timing Function:Delay-On-Make; Relay Mounting:Plug-In; Supply Voltage AC, Max:230V; Supply Voltage AC, Min:115V; Supply Voltage DC, Max:230V RoHS Compliant: Yes Time-Delay Relay; Contacts:NO; Time Range:0.1 to 102.4s; Timing Function:Delay-On-Make; Supply Voltage Max:288V; Supply Voltage Min:100V; Time Range Max:102.4s; Time Range Min:0.1s RoHS Compliant: Yes Low Voltage, Active Transmission Line Termination Clamp (4 Terminations) Time-Delay Relay; Time Range:0.1 - 30; Timing Function:Delay-On-Make; Time Range Max:30s; Time Range Min:0.1s Time-Delay Relay; Time Range:0.1 sec. to 30 sec.; Mounting Type:Plug-In; Timing Function:Delay-On-Make; Supply Voltage:115V RoHS Compliant: Yes Time-Delay Relay; Time Range:1sec. to 1024 sec.; Mounting Type:Plug In; Timing Function:Delay-On-Make; Relay Mounting:Plug-In; Supply Voltage AC, Max:288V; Supply Voltage AC, Min:19V; Supply Voltage DC, Max:288V RoHS Compliant: Yes 2-Port PCI-X to PCI-X Bridge Time-Delay Relay; Contacts:NO; Timing Function:Delay-On-Make; Supply Voltage Max:50V; Supply Voltage Min:18V; Time Range Max:102.4s; Time Range Min:0.1s RoHS Compliant: Yes 512K X 16 FLASH 3V PROM, 120 ns, PDSO48
|
Advanced Micro Devices, Inc.
|
| TLSU1002AT02 TLGU1002AT02 TLPGU1002AT02 EA09751 TL |
TOSHIBA LED lamp. Color amber. Peak emission wavelength(typ) @20mA 596 nm. Luminous intensity @20mA 8.5(min), 30(typ) mcd. TOSHIBA LED lamp. Color yellow. Peak emission wavelength(typ) @20mA 590 nm. Luminous intensity @20mA 8.5(min), 30(typ) mcd. LED LAMP PANEL CIRCUIT INDICATOR From old datasheet system TOSHIBA LED lamp. Color pure-green. Peak emission wavelength(typ) @20mA 562 nm. Luminous intensity @20mA 1.53(min), 6(typ) mcd. TOSHIBA LED lamp. Color green. Peak emission wavelength(typ) @20mA 574 nm. Luminous intensity @20mA 8.5(min), 30(typ) mcd.
|
TOSHIBA[Toshiba Semiconductor] Marktech Optoelectronics
|
| H11G1SR2M H11G1SR2VM H11G1TM H11G1TVM H11G2M H11G1 |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.8 to 4.0; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.9 to 4.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.1 to 4.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.2 to 4.4; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.4 to 4.6; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.0 to 4.2; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD 1 CHANNEL DARLINGTON OUTPUT OPTOCOUPLER
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Fairchild Semiconductor Corporation Fairchild Semiconductor, Corp.
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