| PART |
Description |
Maker |
| 8N90G-TA3-T |
8 Amps, 900 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| 4N90L-TN3-R 4N90G-TN3-R 4N90G-TA3-T 4N90G-TF3-T 4N |
4 Amps, 900 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| MUR1100E MUR190E ON2734 |
1 A, 900 V, SILICON, SIGNAL DIODE
ULTRAFAST RECTIFIERS 1.0 AMPERE 900-1000 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| APT46GA90JD40 |
High Speed PT IGBT
Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
| APT36N90BC3G |
Super Junction MOSFET
Power MOSFET; Package: TO-247 [B]; ID (A): 36; RDS(on) (Ohms): 0.12; BVDSS (V): 900; 36 A, 900 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
Microsemi Corporation
Microsemi, Corp.
|
| NTF3055-160T1 NTF3055-160T3 NTF3055-160T3LF NTF305 |
TRANSISTOR|MOSFET|N-CHANNEL|60VV(BR)DSS|2AI(D)|SOT-223
From old datasheet system
Power MOSFET 2.0 Amps, 60 Volts N?Channel SOT23(2A,60V逻辑电平,N通道，SOT-223封装的功率MOSFET)
Power MOSFET 2.0 Amps, 60 Volts N-Channel SOT-223 2 A, 60 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261
|
ONSEMI[ON Semiconductor]
|
| NTP27N06L-D NTB27N06L NTP27N06L |
Power MOSFET 27Amps, 60 Volts,Logic Level N-Channel TO-220(27A, 60 V,逻辑电平，N通道，TO-220封装的功率MOSFET) 27 A, 60 V, 0.048 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Power MOSFET 27 Amps, 60 Volts, Logic Level N-Channel TO-220 and D2PAK
|
ITT, Corp.
ON Semiconductor
|
| IRFBF20PBF |
1.7 A, 900 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
VISHAY SILICONIX
|
| 2SK2597 |
N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION
|
NEC
|
| QIS1790001 |
Single IGBT Module 900 Amperes/1700 Volts
|
Powerex Power Semicondu...
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