| PART |
Description |
Maker |
| IGC168T170S8RH |
low switching losses and saturation losses
|
Infineon Technologies A...
|
| HYG15P120A1K1 |
low switching losses
|
HY ELECTRONIC CORP.
|
| HYG30P120H1K1 |
low switching losses
|
HY ELECTRONIC CORP.
|
| STL90N3LLH6 |
Low gate drive power losses
|
STMicroelectronics
|
| IKW30N65EL5 |
Best-in-Class tradeoff between conduction and switching losses
|
Infineon Technologies A...
|
| SPI07N60C3 SPA07N60C3 SPP07N60C3 |
for lowest Conduction Losses & fastest Switching
|
Infineon
|
| SPA04N60C3 SPB04N60C3 SPP04N60C3 |
for lowest Conduction Losses & fastest Switching
|
Infineon
|
| SPP16N50C3 |
for lowest Conduction Losses & fastest Switching
|
Infineon
|
| IKD04N60RFA |
Optimized Eon, Eoff and Qrr for low switching losses
|
Infineon Technologies A...
|
| BYC8D-600 BYC8D-600127 BYC8D-600-15 |
Hyperfast power diode Reduces switching losses in associated MOSFET
|
NXP Semiconductors
|
| IRFR3410 |
Low Gate-to-Drain Charge to Reduce Switching Losses
|
Kersemi Electronic Co., Ltd.
|
| MKP1837 |
C-values 0.01 μF - 0.1 μF, Voltage 160 VDC, Tolerances to 1%, Low losses, PCM 5
|
Vishay
|
