| PART |
Description |
Maker |
| MGP20N14CL-D |
SMARTDISCRETES Internally Clamped, N-Channel IGBT
|
ON Semiconductor
|
| MLP2N06CL MLP2N06CLG |
SMARTDISCRETES MOSFET 2 Amps, 62 Volts, Logic Level(2A, 62V, 逻辑电平SMARTDISCRETES MOSFET)
SMARTDISCRETES TM MOSFET 2 Amps, 62 Volts, Logic Level N−Channel TO−220
|
ONSEMI[ON Semiconductor]
|
| MLD1N06CL MLD1N06CLT4 MLD1N06CLT4G |
SMARTDISCRETES MOSFET 1 Amp, 62 Volts, Logic Level N Channel DPAK(智能MOSFET)
SMARTDISCRETES TM MOSFET 1 Amp, 62 Volts, Logic Level N−Channel DPAK
|
ON Semiconductor
|
| BTA16-600BW3G BTA16-800BW3G BTA16-600BW3 |
Triac, 3 Quadrant Internally Isolated, 50 mA I-GT, 16 A I-T(RMS)
Triacs Silicon Bidirectional Thyristors
600V 16 A, 50mA Igt 3 Quadrant Internally Isolated Triac
|
ON Semiconductor
|
| MGFK36V4045 |
RECTIFIER SCHOTTKY SINGLE 2A 100V 50A-Ifsm 0.79Vf 0.5A-IR SMB 3K/REEL
14.0-14.5GHz BAND 4W INTERNALLY MATCHED GaAs FET
14.0-14.5 GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFL45V1920 L45V1920 |
From old datasheet system
1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET
1.9-2.0 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC45V5053A C455053A |
5.05 - 5.25GHz BAND 32W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.05~5.25GHz BAND 32W INTERNALLY MATCHD GaAs FET
5.05-5.25GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| AGB3309 AGB3309S24Q1 AGB3309_REV_1.0 |
50?/a> High Linearity Low Noise Internally Biased Wideband Gain Block
50 High Linearity Low Noise Internally Biased Wideband Gain Block
50蟹 High Linearity Low Noise Internally Biased Wideband Gain Block
50з High Linearity Low Noise Internally Biased Wideband Gain Block
From old datasheet system
|
ANADIGICS[ANADIGICS, Inc]
|
| CAT93C56JA CAT93C56JE CAT93C56JI CAT93C56KA CAT93C |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
2K-Bit Microwire Serial EEPROM
|
Samsung Semiconductor Co., Ltd.
Macronix International Co., Ltd.
HIROSE ELECTRIC Co., Ltd.
Microchip Technology, Inc.
Rohm Co., Ltd.
Vicor, Corp.
CATALYST[Catalyst Semiconductor]
http://
|
| MGFC42V5258 |
5.2-5.8 GHz Band 16W Internally Matched GaAs FET
5.2 - 5.8GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFK35V2732 K352732 |
12.7-13.2GHz BAND 3W INTERNALLY MATCHED GaAs FET
12.7~13.2GHZ BAND 3W INTERNALLY MATCHED GAAS FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CAT93C56VE-1.8-GT3E CAT93C56ZD4E-1.8-GT2E CAT93C56 |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
|
ON Semiconductor
Emulation Technology, Inc.
Electronic Theatre Controls, Inc.
HIROSE ELECTRIC Co., Ltd.
Xiamen Hongfa Electroacoustic Co., Ltd.
ITT, Corp.
|
