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K7R163684B06 - 512Kx36 & 1Mx18 QDRTM II b4 SRAM

K7R163684B06_1354460.PDF Datasheet


Part No.	K7R163684B06 K7R161884B
Description	512Kx36 & 1Mx18 QDRTM II b4 SRAM
File Size	452.10K / 19 Page
Maker	Samsung semiconductor
Homepage	http://www.samsung.com/Products/Semiconductor/
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Related Part Number

PART	Description	Maker
K7Q161862B	(K7Q161862B / K7Q163662B) 512Kx36 & 1Mx18 QDRTM b2 SRAM	Samsung semiconductor
K7N161831B K7N163631B K7N163631B-QFCI25 K7N161831B	512Kx36 & 1Mx18 Pipelined NtRAM 512Kx36 & 1Mx18 Pipelined NtRAM 512Kx36	SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
KM736V989 KM718V089	512Kx36 & 1Mx18 Synchronous SRAM	Samsung Electronic Samsung semiconductor
K7S1636U4C	512Kx36 & 1Mx18 QDR II b4 SRAM	Samsung semiconductor
K7B161835B K7B163635B	512Kx36 & 1Mx18 Synchronous SRAM	Samsung semiconductor
K7K1636U2C K7K1618U2C	512Kx36 & 1Mx18 DDRII CIO b2 SRAM	Samsung semiconductor
K7I163682B06 K7I161882B	512Kx36 & 1Mx18 DDRII CIO b2 SRAM	Samsung semiconductor
IS61DDPB21M18A IS61DDPB21M18A/A1/A2 IS61DDPB251236	1Mx18, 512Kx36 18Mb DDR-IIP(Burst 2) CIO SYNCHRONOUS SRAM	Integrated Silicon Solution, Inc
K7I323682M K7I321882M K7M161825A-QCI65	1Mx36 & 2Mx18 DDRII CIO b2 SRAM 512Kx36 & 1Mx18 Pipelined NtRAM	SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
IS61DDPB41M18A/A1/A2 IS61DDPB451236A/A1/A2	1Mx18, 512Kx36 18Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM	Integrated Silicon Solution, Inc

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