| PART |
Description |
Maker |
| CF930 |
N-Channel GaAs MESFET Tetrode Depletion Mode
|
Telefunken Electronic
|
| CLX27-10 CLX27 CLX27-00 CLX27-05 CLX27-10H |
X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
HiRel X-Band GaAs Power-MESFET 伊雷尔X波段砷化镓功率场效应
|
INFINEON[Infineon Technologies AG]
|
| SGM2013 SGM2013N |
UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
GaAs N-channel Dual-Gate MES FET
GaAs N-channel Dual-Gate MES FET
|
SONY[Sony Corporation]
SONY [Sony Corporation]
|
| NEZ1414-2E |
KU BAND, GaAs, N-CHANNEL, RF POWER, MESFET T-78, 2 PIN
|
NEC, Corp.
|
| CLY32-10ES |
C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
|
SIEMENS A G
|
| NEZ6472-15D |
C BAND, GaAs, N-CHANNEL, RF POWER, MESFET HERMETIC SEALED, T-65, 2 PIN
|
Electronics Industry Public Company Limited
|
| NE8500295-8 NE8500295-6 NE8500295-4 NE85002 NE8500 |
2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
C BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
NEC Corp.
NEC[NEC]
|
| KGL4215 |
10-Gbps Decision Circuit 0.2μm Gate Length GaAs MESFET Technology
10-Gbps Decision Circuit 0.2レm Gate Length GaAs MESFET Technology
10-Gbps Decision Circuit 0.2m Gate Length GaAs MESFET Technology
|
OKI[OKI electronic componets]
OKI electronic components
|
| FH101 |
GaAs MESFET
|
TriQuint Semiconductor
|
| NE650103M-A |
10 W L & S-BAND POWER GaAs MESFET
|
California Eastern Laboratories
|
