| PART |
Description |
Maker |
| NE6510179A-A NE6510179A-T1 |
NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET
|
Duracell
California Eastern Laboratories
|
| NE650103M |
NECS 10 W L & S-BAND POWER GaAs MESFET
|
California Eastern Laboratories
ETC[ETC]
|
| UPG2027TQ UPG2027TQ-E1-A |
NECs L-BAND 4W HIGH POWER SPDT SWITCH IC
|
NEC
|
| UPG2214TB-E4-A |
50 MHz - 3000 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 0.65 dB INSERTION LOSS
2-WIRE FACTORY PROGRAMMED W/TIN PLATING
NECs W LOW VOLTAGE L/ S-BAND SPDT SWITCH
NECs ?W LOW VOLTAGE L, S-BAND SPDT SWITCH
|
NEC Corp.
|
| FLL1200IU-2 |
L-Band Medium & High Power GaAs FET L BAND, GaAs, N-CHANNEL, RF POWER, JFET
L-Band Medium & High Power GaAs FET
|
Fujitsu Component Limited.
Fujitsu, Ltd.
Fujitsu Limited
|
| AWT6108 AWT6108M10P8 |
This quad band power amplifier module is designed to support dual, tri and quad band applications.
Power Amplifiers
Quad Band Power Amplifier Module 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
Anadigics Inc
ANADIGICS, Inc.
|
| UPG2031TQ-E1-A UPG2031TQ |
NECs L-BAND SP3T SWITCH
|
CEL[California Eastern Labs]
|
| TGA1073A TGA1073A-SCC |
26- 34 GHz Medium Power Amplifier 26000 MHz - 35000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
TriQuint Semiconductor, Inc.
TRIQUINT[TriQuint Semiconductor]
|
| FLU17XM |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
L-Band Medium & High Power GaAs FET
|
FUJITSU LTD
EUDYNA[Eudyna Devices Inc]
|
| MGFC5217 C5217A |
18000 MHz - 19000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
From old datasheet system
K-Band 2-Stage Power Amplifier
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| UPG2015TBNBSP UPG2015TB UPG2015TB-E3 |
NECs 1W SINGLE CONTROL L, S-BAND SPDT SWITCH
|
NEC Corp.
|
