| PART |
Description |
Maker |
| AN1226 |
UNDERSTANDING LDMOS DEVICE FUNDAMENTALS
|
SGS Thomson Microelectronics
|
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| BLF573S BLF573 |
HF / VHF power LDMOS transistor
A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.
HF - VHF power LDMOS transistor
|
NXP Semiconductors N.V.
|
| VCO-109 |
Nominal Operating Parameters
|
RF Micro Devices
|
| SI7415DN-RC |
R-C Thermal Model Parameters
|
Vishay Siliconix
|
| SI4378DYRC |
R-C Thermal Model Parameters
|
Vishay Siliconix
|
| SI4496DY-RC SI4496DY |
R - C Thermal Model Parameters
|
VISAY[Vishay Siliconix]
|
| SI3865BDVRC |
R-C Thermal Model Parameters
|
Vishay Siliconix
|
| RLDH980-70-3 |
main technical parameters
|
Roithner LaserTechnik G...
|
| SI4483EDYRC |
R-C Thermal Model Parameters
|
Vishay Siliconix
|
| VCO-110TC |
Nominal Operating Parameters
|
RF Micro Devices
|
