| PART |
Description |
Maker |
| BUZ104S Q67040-S4007-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175∑C operating temperature) 14 A, 55 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
SIPMOS ? Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature)
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175°C operating temperature)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| IRFF9220 2N6847 JANTX2N6847 JANTXV2N6847 |
-200V Single P-Channel Hi-Rel MOSFET in a TO-205AF package
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?TRANSISTORS THRU-HOLE (TO-205AF)
HEXFET TRANSISTORS THRU-HOLE (TO-205AF)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-205AF)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-205AF)
|
International Rectifier
|
| SFF116N10M SFF116N10Z |
Avalanche Rated N-channel MOSFET
|
Solid States Devices, Inc
|
| SFF75N10B SFF75N10B1 SFF27N50M SFF27N50Z |
Avalanche Rated N-channel MOSFET
|
Solid States Devices, Inc
Solid States Devices, I...
|
| IXFH120N25X3 |
N-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
| IXTY1R4N60P IXTP1R4N60P IXTU1R4N60P |
N-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
| IXTX32P60P |
P-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
| IXTC160N10T |
N-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
| IXTA56N15T IXTP56N15T |
N-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
| FT0054A FT0054A-15 |
Avalanche Rated N-channel HiPower MOSFET
|
Solid States Devices, I...
|
