| PART |
Description |
Maker |
| MMBT2131 MMBT2131T1 |
Bipolar Junction Transistor
|
ON Semiconductor
|
| MRF5812 MRF5812G |
Bipolar Junction Transistor
|
Advanced Power Technology
|
| S13003AD-H |
Bipolar Junction Transistor
|
Shenzhen Jingdao Electr...
|
| S13005A |
Bipolar Junction Transistor
|
Shenzhen Jingdao Electr...
|
| JANSM2N3439 JANSM2N3439L |
BJT( BiPolar Junction Transistor)
|
Microsemi
|
| 2N1483E3 2N1485E3 2N1484E3 |
BJT( BiPolar Junction Transistor)
PNP Transistor
|
Microsemi
|
| JANSG2N2369A JANS2N2369AUA |
BJT( BiPolar Junction Transistor)
NPN Transistor
|
Microsemi
|
| MMBT2132T306 MMBT2132T3G MMBT2132T3 |
General Purpose Transistors NPN Bipolar Junction Transistor
|
ONSEMI[ON Semiconductor]
|
| IRGP4066D-EPBF IRGP4066DPBF IRGP4066DPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
International Rectifier
|
| CZT122 CZT127 |
SMD Bipolar Power Transistor PNP Darlington
SMD Bipolar Power Transistor NPN Darlington
SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR
|
Central Semiconductor Corp
|
| IRG4BC29K IRG4BC30K IRG4BC30 |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
|
IRF[International Rectifier]
|
