| PART |
Description |
Maker |
| BFS460L6 |
ESD-Hardened RF-Bipolar NPN Transistors in Standard SOT343 and TSLP-3 (single) & TSLP-6 (dual) Leadless Packages
|
Infineon
|
| BFS17W BFS17W. |
RF-Bipolar - For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
RF-Bipolar NPN Type Transistors with transition frequency from 1 to 6 GHz
NPN Silicon RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| RHF43BK-01V RHF43B RHF43BK1 RHF43BK2 |
RAD-hardened precision bipolar single operational amplifier
|
STMicroelectronics
|
| BUD43D2 BUD43D2-1 BUD43D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability
|
ON Semiconductor
|
| 2N5302 |
Bipolar NPN Device in a Bipolar NPN Device in a Metal Package.
|
SEME-LAB[Seme LAB]
|
| AT-38086 |
4.8 V NPN Silicon Bipolar Common Emitter Transistor(4.8 V NPN 硅双极型普通射极晶体管)
|
Agilent(Hewlett-Packard)
|
| BUX50SMD |
3.5 A, 125 V, NPN, Si, POWER TRANSISTOR, TO-276AB
Bipolar NPN Device in a Hermetically sealed
|
SEMELAB LTD
Seme LAB
|
| BC440-5 |
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 2A I(C) | TO-39
Bipolar NPN Device in a Hermetically sealed TO39
|
Seme LAB
|
| BUV61 BUV61.MOD |
50 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-204AE
Bipolar NPN Device in a Hermetically sealed TO3
|
SEMELAB LTD
Seme LAB
|
| BUV11 BUV11.MOD |
20 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-204AE
Bipolar NPN Device in a Hermetically sealed TO3
|
SEMELAB LTD
Seme LAB
|
| PHPT610035NK |
NPN/NPN high power double bipolar transistor
|
NXP Semiconductors
|
