| PART |
Description |
Maker |
| S29GL032M10BACR00 S29GL032M10BACR12 S29GL032M10BAC |
CAP 15PF 100V 5% NP0(C0G) SMD-0805 TR-7-PL SN-NIBAR
TERM BLOCK 3.5MM HOR 6POS PCB
Ceramic Capacitor Sample Kit, High CV MirrorBit闪存系列
MirrorBit Flash Family MirrorBit闪存系列
FLEX CONNECTOR, 10 POSN., SMT, VERTICAL, W/EXT.SLIDER, ZIF, T&R RoHS Compliant: Yes MirrorBit闪存系列
Tantalum Capacitor; Capacitance:470uF; Capacitance Tolerance: /- 20 %; Working Voltage, DC:6V; Package/Case:7343-43; Terminal Type:PCB SMT; ESR:0.001ohm; Leaded Process Compatible:No; Packaging:Cut Tape MirrorBit闪存系列
Replaced by PTB48520W : MirrorBit闪存系列
MirrorBit Flash Family 2M X 16 FLASH 3V PROM, 100 ns, PBGA64
MirrorBit Flash Family 2M X 16 FLASH 3V PROM, 100 ns, PBGA48
CAP D POLYMER TANT 330UF 4V 20%
|
ETC
Spansion Inc.
Spansion, Inc.
|
| S29GL032M1 S29GL032M10FBIR43 S29GL032M10FCCR10 S29 |
MirrorBit Flash Family
|
ETC
SPANSION
|
| S29GL016A10FFIR13 S29GL-A S29GL016A10FFIR23 S29GL0 |
S29GL-A MirrorBit Flash Family S29GL -阿MirrorBit闪存系列
|
Spansion Inc.
Spansion, Inc.
|
| K9F2808U0C-VIB0 K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory 1,600 × 8位，8米16位NAND闪存
16M X 8 FLASH 2.7V PROM, 30 ns, PBGA63
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| MB84VA2100 MB84VA2101-10 MB84VA2101 MB84VA2100-10 |
MCP (Multi-Chip Package) FLASH MEMORY & SRAM 16M (x 8) FLASH MEMORY & 2M (x 8) STATIC RAM
(MB84VA2100 / MB84VA2101) 16M (x 8) FLASH MEMORY & 2M (x 8) STATIC RAM
|
Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
|
| MX25L1605ZM MX25L1605ZMC-20 MX25L1605ZMC-20G MX25L |
16M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY 16M X 1 FLASH 2.7V PROM, DSO8
|
Macronix International Co., Ltd.
|
| MX25L1602 MX25L1602MC-50 |
16M-BIT [16M x 1] CMOS SERIAL FLASH EEPROM
|
Macronix International
|
| S29GL032N11TAIV13 2N11FAIV22 S29GL032N70BAI43 S29G |
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 2M X 16 FLASH 3V PROM, 110 ns, PDSO56
2M X 16 FLASH 3V PROM, 70 ns, PBGA48
2M X 16 FLASH 3V PROM, 70 ns, PBGA64
2M X 16 FLASH 3V PROM, 90 ns, PDSO48
4M X 16 FLASH 3V PROM, 70 ns, PBGA48
4M X 16 FLASH 3V PROM, 90 ns, PBGA48
|
Spansion, Inc.
SPANSION LLC
|
| TE28F256J3F105A RC28F256J3F95 |
16M X 16 FLASH 2.7V PROM, 105 ns, PDSO56
16M X 16 FLASH 2.7V PROM, 95 ns, PBGA64
|
NUMONYX
|
| S29GL064N11BAIV10 S29GL064N11FAIV12 S29GL064N11BFI |
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 64兆，32兆位3.0伏只页面模式闪存具有110纳米MirrorBit工艺技
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
|
Spansion Inc.
PROM
Spansion, Inc.
SPANSION LLC
|
| MX25L1605AM2I-12 MX25L1605AMC-12 MX25L1605AMC-15 |
16M X 1 FLASH 2.7V PROM, PDSO8
16M X 1 FLASH 2.7V PROM, PDSO16
|
MACRONIX INTERNATIONAL CO LTD
|
