| PART |
Description |
Maker |
| VII100-06P1 VIO100-06P1 VDI100-06P1 VID100-06P1 IX |
IGBT Modules: Boost Configurated IGBT Modules
2-WIRE FIELD PROGRAMMABLE W/TIN PLATING
|
IXYS[IXYS Corporation]
|
| CM150E3U-24H |
IGBT Modules:1200V
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| VUB120-12NO2 VUB120-16NO2 VUB160-16NO2 VUB160-12NO |
Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System 140 A, 1200 V, N-CHANNEL IGBT
Power Modules/Rectifier Bridge Modules: Three Phase Bridges with Dynamic Brake IGBT
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| MID400-12E4T |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS
|
| MID100-12A3 MII100-12A3 |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS Corporation
|
| SKM195GB063DN SKM195GAL063DN SKM195GAR063DN |
Superfast NPT-IGBT Modules 250 A, 600 V, N-CHANNEL IGBT
|
Semikron International
|
| SKM145GB124DN SKM145GAL124DN |
Low Loss IGBT Modules 190 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON[Semikron International]
|
| SEMIX553GAR128D SEMIX553GAL128D |
SPT IGBT Modules 540 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON
|
| SEMIX703GB126HD SEMIX703GB126HD07 |
Trench IGBT Modules 700 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
|
| SEMIX503GB126HDS |
Trench IGBT Modules 480 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON[Semikron International]
|
| RM30TA-H RM30TPM-M RM30TA-M |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
| MDI100-12A3 MII100-12A3 |
IGBT Modules 135 A, 1200 V, N-CHANNEL IGBT
|
IXYS, Corp.
IXYS Corporation
ETC[ETC]
|
