| PART |
Description |
Maker |
| UPD424440LE-70 UPD424440LE-60 UPD424440LE-80 UPD42 |
MoBL® 8-Mbit (1024K x 8) Static RAM MoBL® 8-Mbit (512K x 16) Static RAM CY62167DV30 MoBL® - 16-Mbit (1M x 16) Static RAM x4 Fast Page Mode DRAM x4快速页面模式的DRAM
|
Vishay Intertechnology, Inc.
|
| Y15-12-15 Y15-12-12 Y15-12S5 Y15-12S5-15B2A Y15-12 |
MoBL® 8-Mbit (512K x 16) Static RAM Programmable Skew Clock Buffer Analog IC 模拟IC MoBL® 8-Mbit (512K x 16) Static RAM 模拟IC EZ-USB FX2LP™ USB Microcontroller High-Speed USB Peripheral Controller
|
HIROSE ELECTRIC Co., Ltd.
|
| CY62157DV3010 |
8-Mbit (512K x 16) MoBL Static RAM
|
Cypress Semiconductor
|
| CY62157DV30 CY62157DV30LL-70ZXI CY62157DV30L CY621 |
8-Mbit (512K x 16) MoBL Static RAM 512K X 16 STANDARD SRAM, 45 ns, PBGA48 8-Mbit (512K x 16) MoBL Static RAM 8兆位(为512k × 16)的MoBL静态RAM 8-Mbit (512K x 16) MoBL Static RAM 512K X 16 STANDARD SRAM, 55 ns, PBGA48 8-Mbit (512K x 16) MoBL Static RAM 512K X 16 STANDARD SRAM, 45 ns, PDSO44 Circular Connector; Body Material:Aluminum; Series:PT00; No. of Contacts:39; Connector Shell Size:20; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Pin; Insert Arrangement:20-39 Circular Connector; Body Material:Aluminum; Series:PT00; No. of Contacts:39; Connector Shell Size:20; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket; Insert Arrangement:20-39 Bundled Coaxial Cable; Impedance:75ohm; Conductor Size AWG:30; No. Strands x Strand Size:7 x 38; Jacket Material:Polyvinylchloride (PVC); Conductor Material:Copper; Conductor Plating:Tin; Jacket Color:Matte Black RoHS Compliant: Yes Coaxial Cable; Conductor Size AWG:30; No. Strands x Strand Size:7 x 38; Jacket Material:Polyvinylchloride (PVC); Number of Conductors:1; Voltage Nom.:600V RoHS Compliant: Yes Quadruple 2-Input Positive-OR Gate 14-TSSOP -40 to 85 8-Mbit (512K x 16) MoBL(R) Static RAM
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp. CYPRESS[Cypress Semiconductor]
|
| CYDMX064A16-90BVXI CYDMX064B16 CYDMX256A16-65BVXI |
16 K/8 K/4 K x 16 MoBL ADM 16 K/8 K/4 K x 16 MoBL ADM High speed access CYDMX064A16 West Bridge Peripheral Controllers; Bus Width: x16; Speed: 90ns 1.8V 4K/8K/16K x 16 MoBL® Dual-Port Static RAM
|
CYPRESS SEMICONDUCTOR CORP
|
| BAS20 BAS19 BAS21 BAS21TC BAS19TA BAS19TC BAS20TC |
CY62148E MoBL® 4-Mbit (512K x 8) Static RAM SILICON HIGH SPEED SWITCHING DIODE
|
Zetex Semiconductors
|
| CY62148ELL-55SXIT |
CY62148E MoBL® 4-Mbit (512K x 8) Static RAM 512K X 8 STANDARD SRAM, 55 ns, PDSO32
|
Cypress Semiconductor, Corp.
|
| BBS-15 BBS-1/4 BBS-2/10 BBS-1-8/10 BBS-10 BBS-1-6/ |
72-Mbit QDR-II SRAM 2-Word Burst Architecture 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 72-Mbit DDR-II SRAM 2-Word Burst Architecture 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 36-Mbit QDR-II SRAM 4-Word Burst Architecture Fuse 256K (32K x 8) Static RAM 64/256/512/1K/2K/4K x 18 Synchronous FIFOs Low-Voltage 64/256/512/1K/2K/4K/8K x 9 Synchronous FIFOs Neuron® Chip Network Processor 64-Kbit (8K x 8) Static RAM 72-Mbit QDR™-II SRAM 2-Word Burst Architecture 保险
|
NXP Semiconductors N.V.
|
| CY7C1041DV33-10ZSXA CY7C1041DV33-10ZSXI CY7C1041DV |
4-Mbit (256 K ? 16) Static RAM 4-Mbit (256 K × 16) Static RAM
|
Cypress Semiconductor
|
| CY7C1010DV33-10ZSXIT |
2-Mbit (256 K 8) Static RAM
|
Cypress
|
| UPD4265800LE-A80 UPD4264800LE-A80 UPD4265800LE-A70 |
18-Mbit QDR-II SRAM 2-Word Burst Architecture 64K x 16 Static RAM 1K x 8 Dual-Port Static RAM 1-Mbit (64K x 16) Static RAM x8快速页面模式的DRAM
|
STMicroelectronics N.V.
|
| AM41PDS3224D |
32 Mbit (2 M x 16-Bit) CMOS 1.8 Volt-only. Simultaneous Operation Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM (Preliminary) 32兆位米16位)的CMOS电压1.8只。同时采取行动,页面模式闪存兆位12x 8-Bit/256x 16位),静态存储器(初步) Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
|
Advanced Micro Devices
|