PART |
Description |
Maker |
AT49BV002AT AT49BV002ANT |
256K x 8 (2M bit), 2.7-Volt Read and 2.7-Volt Write, Top Boot Parametric Block Flash.
|
Atmel
|
AT49F4096ANBSP AT49F4096A-70CC AT49F4096A-90CC |
EEPROM 4M bit, 5-Volt Read and 5-Volt Write Flash
|
Atmel Corp
|
AT29C040A |
4M bit, 5-Volt Read and 5-Volt Write Flash
|
Atmel
|
AT29C010A |
1M bit, 5-Volt Read and 5-Volt Write Flash
|
Atmel
|
AT49BV8011 AT49BV8011-12CI AT49LV8011 AT49LV8011-9 |
8M bit. 2.7-Volt Read and 2.7-Volt Byte-Write Sectored Flash. Bottom Boot 800万位2.7伏读取和2.7伏字节写扇区闪存。底部启 x8/x16 Flash EEPROM x8/x16闪存EEPROM 8-megabit (512K x 16/1M x 8) 3-volt Only Flash Memory
|
3M Company Atmel, Corp. AMIC Technology, Corp. Advanced Micro Devices, Inc. ATMEL[ATMEL Corporation]
|
AM29BDD160GT54DKI AM29BDD160GB64CKI AM29BDD160GB65 |
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 54 ns, PQFP80 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 64 ns, PQFP80 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 67 ns, PQFP80 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 16兆位 M中的x 16-bit/512亩32位).5伏的CMOS只突发模式,双启动,同步写闪 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 54 ns, PBGA80
|
Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
|
BS320GBD4V BS320GTD4V AM29BDS320GBD9VMI AM29BDS320 |
32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 2M X 16 FLASH 1.8V PROM, 90 ns, PBGA64 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 32兆位米16位).8伏,只有同时写,突发模式闪存 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 2M X 16 FLASH 1.8V PROM, 70 ns, PBGA64
|
Spansion Inc. Spansion, Inc.
|
AM29DL640D35WHFN AM29DL640D90EF D640D90VI AM29DL64 |
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
|
AMD[Advanced Micro Devices]
|
AM29BDD160G |
(16 Megabit (1 M x 16-bit/512 K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Wr From old datasheet system
|
AMD Inc
|
AM29BDD160G |
16 Megabit (1 M x 16-bit/512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
|
Advanced Micro Devices
|
AM29PDL127H68VKI AM29PDL127H65VKIN AM29PDL127H68VK |
128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control 128兆位8米16位).0伏的CMOS只,页面模式同步写闪存与增强VersatileIO控制记忆 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control 8M X 16 FLASH 3V PROM, 65 ns, PBGA64 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control 8M X 16 FLASH 3V PROM, 55 ns, PBGA64 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control 8M X 16 FLASH 3V PROM, 85 ns, PBGA64 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control 8M X 16 FLASH 3V PROM, 55 ns, PBGA80 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control 128兆位米16位).0伏的CMOS只,页面模式同步写闪存与增强VersatileIO控制记忆
|
Advanced Micro Devices Spansion, Inc. Spansion Inc.
|
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