| PART |
Description |
Maker |
| TH58V128DC |
128 Mbit (16M x 8bit) CMOS NAND E2PROM (16M BYTE SmartMedia)
|
Toshiba Semiconductor
|
| V826516B04S |
128 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 16M x 64
|
Mosel Vitelic Corp
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| V826516G04S |
128 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 16M x 64
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| 69F160808 69F1608RPFK |
128 Megabit (16M x 8-Bit) Flash Memory Module
128 Megabit (16M x 8-Bit) Flash Memory Module
|
Maxwell Technologies
|
| S25FL128P0XNFI001 S25FL128P0XMFI013 S25FL128P0XNFI |
128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Bus 16M X 8 FLASH 3V PROM, DSO8
128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Bus 16M X 8 FLASH 3V PROM, PDSO16
|
Spansion, Inc.
SPANSION LLC
|
| 29PL256N S29PL129N70GAW003 S29PL256N65GFWW03 |
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 8M X 16 FLASH 3V PROM, 70 ns, PBGA64
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 16M X 16 FLASH 3V PROM, 65 ns, PBGA84
|
Spansion Inc.
Spansion, Inc.
|
| TC58128DC |
128M Bit (16M×8Bits ) CMOS NAND EEPROM(16M×8CMOS与非EEPROM)
|
Toshiba Corporation
|
| MC-4516DA726 |
16M-Word By72-BIT Dynamic RAM Module(16M×72位动态RAM模块)
|
NEC Corp.
|
| MX25L1602 MX25L1602MC-50 |
16M-BIT [16M x 1] CMOS SERIAL FLASH EEPROM
|
Macronix International
|
| LH28F160S5H-L |
16M-bit (2MB x 8/1MB x 16) Smart 5 Flash Memories(16M(2Mx 8/1Mx 16) Smart5 技术闪速存储器)
|
Sharp Corporation
|
