| PART |
Description |
Maker |
| BS62LV4006 BS62LV4006EC-70 BS62LV4006PC BS62LV4006 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
Asynchronous 4M(512Kx8) bits Static RAM
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BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
Brilliance Semiconducto...
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| N04Q1618C2B N04Q1612C2BX-15C N04Q1618C2BX-15C N04Q |
4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K6 bit POWER SAVER TECHNOLOGY
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AMI SEMICONDUCTOR
|
| N04L163WC1A |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit
|
NanoAmp Solutions
|
| N08L63W2AB27I N08L63W2AB27IT N08L63W2AB7I N08L63W2 |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 隆驴 16 bit
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit
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ON Semiconductor
|
| N01L1618N1A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64Kx16 bit
|
NanoAmp Solutions
|
| N08L163WC1C |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K x 16 bit
|
NanoAmp Solutions
|
| N04L1618C2AB2-70I N04L1618C2A N04L1618C2AB N04L161 |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit
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http://
NANOAMP[NanoAmp Solutions, Inc.]
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| N04L163WC2A |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit
|
NanoAmp Solutions
|
| N02L163WN1A |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K x 16 bit
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NanoAmp Solutions
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